NDLI: Performance and hot-carrier reliability of N- and P-MOSFETs with rapid thermally NO-nitrided SiO/sub 2/ gate dielectrics

Content Provider	IEEE Xplore Digital Library
Author	Bhat, M. Wristers, D. Yan, J. Han, L.K. Fulford, J. Kwong, D.L.
Copyright Year	1994
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA (Bhat, M.; Wristers, D.; Yan, J.; Han, L.K.)
Abstract	This paper reports on the performance and hot-carrier reliability of N- and P-channel MOSFET's with oxynitride gate dielectrics fabricated by rapid thermal nitridation of thermally grown SiO/sub 2/ in pure nitric oxide (NO) ambient. NO nitridation results in an increase in the nitrogen (N) incorporation in the dielectric without a significant increase in oxide thickness. High field electron mobility is found to increase with NO-nitridation while hole mobility is only slightly degraded. Hot-carrier reliability of both N- and P-channel MOSFETs is found to be significantly enhanced with increasing NO-nitridation. A 1000/spl deg/C, 10-second NO-anneal is found to be the optimum nitridation condition since, compared to control oxide devices, these devices showed comparable electron and hole mobility but significantly enhanced hot-carrier immunity.<>
Starting Page	329
Ending Page	332
File Size	361043
Page Count	4
File Format	PDF
ISBN	0780321111
ISSN	01631918
DOI	10.1109/IEDM.1994.383401
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-12-11
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hot carriers MOSFET circuits Thermal engineering Kinetic theory Rapid thermal annealing Dielectric devices Nitrogen Electron mobility Hydrogen CMOS technology
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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Electrical properties and reliability of MOSFET's with rapid thermal NO-nitrided SiO/sub 2/ gate dielectrics

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