NDLI: Mechanisms of interface trap-induced drain leakage current in off-state n-MOSFET's

Content Provider	IEEE Xplore Digital Library
Author	Tse-En Chang Chimoon Huang Tahui Wang
Copyright Year	1963
Abstract	An interface trap-assisted tunneling and thermionic emission model has been developed to study an increased drain leakage current in off-state n-MOSFET's after hot carrier stress. In the model, a complete band-trap-band leakage path is formed at the Si/SiO/sub 2/ interface by hole emission from interface traps to a valence band and electron emission from interface traps to a conduction band. Both hole and electron emissions are carried out via quantum tunneling or thermal excitation. In this experiment, a 0.5 /spl mu/m n-MOSFET was subjected to a dc voltage stress to generate interface traps. The drain leakage current was characterized to compare with the model. Our study reveals that the interface trap-assisted two-step tunneling, hole tunneling followed by electron tunneling, holds responsibility for the leakage current at a large drain-to-gate bias (V/sub dg/). The lateral field plays a major role in the two-step tunneling process. The additional drain leakage current due to band-trap-band tunneling is adequately described by an analytical expression /spl Delta/I/sub d/=Aexp(B/sub it//F). The value of B/sub it/ about 13 mV/cm was obtained in a stressed MOSFET, which is significantly lower than in the GIDL current attributed to direct band-to-band tunneling. As V/sub dg/ decreases, a thermionic-field emission mechanism, hole thermionic emission and electron tunneling, becomes a primary leakage path. At a sufficiently low V/sub dg/, our model reduces to the Shockley-Read-Hall theory and thermal generation of electron-hole pairs through traps is dominant.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	738
Ending Page	743
Page Count	6
File Size	562187
File Format	PDF
ISSN	00189383
Volume Number	42
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Leakage current Tunneling Electron traps Thermionic emission MOSFET circuits Electron emission Thermal stresses Charge carrier processes Hot carriers Voltage
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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