NDLI: A new write/erase method for the reduction of the stress-induced leakage current based on the deactivation of step tunneling sites for flash memories

Content Provider	IEEE Xplore Digital Library
Author	Endoh, T. Shimizu, K. Iizuka, H. Watanabe, S. Masuoka, F.
Copyright Year	1994
Description	Author affiliation: ULSI Res. Lab., Toshiba R&D Centetr, Kawasaki, Japan (Endoh, T.; Shimizu, K.; Iizuka, H.; Watanabe, S.; Masuoka, F.)
Abstract	This paper describes a new write/erase method to improve the read disturb characteristics by means of drastically reducing the stress-induced leakage current in the tunnel oxide. With the proposed write/erase method, the degradation of the read disturb life time after 10/sup 6/ write/erase cycles can be drastically reduced to 50% in comparison with the conventional bipolarity write/erase method. The features of the proposed write/erase method are as follows: (1) applying an additional pulse to the control gate just after completion of the write/erase operation; (2) the voltage of the additional pulse is higher than that of the control gate in a read operation, and lower than that of the control gate in a write operation; and (3) the polarity of the voltage is the same as that of the control gate voltage in the read operation. This proposed write/erase method is based on the deactivation mechanism of the leakage current, which is discussed in detail in this paper.<>
Starting Page	49
Ending Page	52
File Size	354435
Page Count	4
File Format	PDF
ISBN	0780321111
ISSN	01631918
DOI	10.1109/IEDM.1994.383469
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-12-11
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Leakage current Tunneling Stress Voltage control Monitoring Degradation Pulse measurements Electron traps Energy states Space vector pulse width modulation
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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