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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Kee-Won Kwon Chang-Seok Kang Soon Oh Park Ho-Kyu Kang Sung Tae Ahn |
| Copyright Year | 1963 |
| Abstract | The thermal degradation of the Ta/sub 2/ O/sub 5/ capacitor during BPSG reflow has been studied. The cause of deterioration of Ta/sub 2/O/sub 5/ with the TiN top electrode was found to be the oxidation of TiN. By placing a poly-Si layer between TiN and BPSG to suppress oxidation, the low leakage current level was maintained after BPSG reflow at 850/spl deg/C. The Ta/sub 2/O/sub 5/ capacitor with the TiN/poly-Si top electrode was integrated into 256-Mbit DRAM cells and excellent leakage current characteristics were obtained. |
| Sponsorship | IEEE Electron Devices Society |
| Starting Page | 919 |
| Ending Page | 923 |
| Page Count | 5 |
| File Size | 866480 |
| File Format | |
| ISSN | 00189383 |
| Volume Number | 43 |
| Issue Number | 6 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1996-06-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Robustness Capacitors Random access memory Tin Thermal degradation Annealing Plasma temperature Leakage current Electrodes Plasma measurements |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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