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Content Provider | IEEE Xplore Digital Library |
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Author | Denninghoff, D. Lu, J. Ahmadi, E. Keller, S. Mishra, U.K. |
Copyright Year | 2013 |
Description | Author affiliation: Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, Santa Barbara, CA, USA (Denninghoff, D.; Lu, J.; Ahmadi, E.; Keller, S.; Mishra, U.K.) |
Abstract | This paper reports 1.89 S/mm extrinsic transconductance, 4 A/mm drain current density, and 0.23 Ω-mm on-resistance on depletion-mode nitrogen-polar GaN MIS-HEMTs with a 5.4-nm GaN channel and a novel InAlN/AlGaN back barrier grown by MOCVD on a vicinal sapphire substrate. These dc figures of merit are among the best values reported for all GaN HEMTs. Additionally, an $f_{T}$ of 204 GHz using a 70-nm T-gate (14.3 GHz*μm $f_{T*}L_{g}$ product) and an $f_{max}$ of 405 GHz using a 90-nm T-gate were obtained. These frequency figures of merit match the state-of-the-art Ga-polar devices with similar gate lengths. GaN-based HEMTs have demonstrated tremendous performance in high-frequency, high-power applications due to the high electron velocity, sheet charge density, and critical electric field of the III-N material system. The dc and high-frequency performance of N-polar and Ga-polar HEMTs has increased rapidly as the result of highly scaled device dimensions and advanced epitaxial structures [1]-[4]. |
Starting Page | 197 |
Ending Page | 198 |
File Size | 518391 |
Page Count | 2 |
File Format | |
ISBN | 9781479908110 |
ISSN | 15483770 |
e-ISBN | 9781479908141 |
DOI | 10.1109/DRC.2013.6633861 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2013-06-23 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Gallium nitride HEMTs MODFETs Logic gates Aluminum gallium nitride Transconductance Resistance |
Content Type | Text |
Resource Type | Article |
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