NDLI: 374GHz cut-off frequency of ultra thin InAlN/AlN/GaN MIS HEMT

Content Provider	IEEE Xplore Digital Library
Author	Amarnath, G. Srinivas, G. Lenka, T.R.
Copyright Year	2015
Description	Author affiliation: Dept. of Electron. & Commun. Eng., Nat. Inst. of Technol., Silchar, India (Amarnath, G.; Srinivas, G.; Lenka, T.R.)
Abstract	We report ultra thin InAlN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor (HEMT) with AlN spacer layer by achieving 374GHz current gain cut-off frequency. The lattice matched InAlN/AlN/GaN HEMT with a 0.17 fraction of Indium content was enhanced the high frequency characteristics with a 30nm gate length by prevent the dissemination of short channel effects. A thin oxide layer is used above the InAlN barrier layer to reduce the gate leakage current in the two orders of magnitude. The HEMT shows an RF extrinsic Transconductance $(g_{m})$ is 835 mS/mm, gate-to-source capacitance $(C_{gs})$ is 264fF/mm and gate-to-drain capacitance $(C_{gd})$ is 33fF/mm. A maximum drain current density $(I_{d})$ of 1.9 A/mm is acquired. The electron mobility of 1256 $cm^{2}/V-s,$ two-dimensional electron gas (2DEG) concentration is 2 × $10^{19}$ $cm^{-3}$ and the electron velocity of 1.91 × $10^{7}$ cm/s has achieved. These results are in well correspondence with the fabricated device available in the literature.
Starting Page	1
Ending Page	4
File Size	453771
Page Count	4
File Format	PDF
ISBN	9781479968046
e-ISBN	9781479968053
DOI	10.1109/ICCCI.2015.7218141
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-08
Publisher Place	India
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	AlN Cutoff frequency HEMT InAlN Gallium nitride III-V semiconductor materials MODFETs GaN Current Gain cut-off frequency (fT) HEMTs Logic gates Transconductance Aluminum nitride
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Electrical characteristics and 2DEG properties of passivated InAlN/AlN/GaN HEMT

Realization of improved transconductance and capacitance characteristics in Al0.3Ga0.7N/AlN/GaN HEMT

Comparative study of AlN/GaN HEMT and MOSHEMT structures by varying oxide thickness

N-polar GaN/InAlN/AlGaN MIS-HEMTs with 1.89 S/mm extrinsic transconductance, 4 A/mm drain current, 204 GHz fT and 405 GHz fmax

Al₂O₃/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

RF performance investigation of DMG AlGaN/GaN high electron mobility transistor

RF and microwave characteristics of a 20nm gate length InAlN/GaN-based HEMT having a high “Figure of Merit”

AlN/GaN/AlN double heterostructures with thin AlN top barriers

245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

374GHz cut-off frequency of ultra thin InAlN/AlN/GaN MIS HEMT

Similar Documents

Electrical characteristics and 2DEG properties of passivated InAlN/AlN/GaN HEMT

Realization of improved transconductance and capacitance characteristics in Al0.3Ga0.7N/AlN/GaN HEMT

Comparative study of AlN/GaN HEMT and MOSHEMT structures by varying oxide thickness

N-polar GaN/InAlN/AlGaN MIS-HEMTs with 1.89 S/mm extrinsic transconductance, 4 A/mm drain current, 204 GHz fT and 405 GHz fmax

Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

RF performance investigation of DMG AlGaN/GaN high electron mobility transistor

RF and microwave characteristics of a 20nm gate length InAlN/GaN-based HEMT having a high “Figure of Merit”

AlN/GaN/AlN double heterostructures with thin AlN top barriers

245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

374GHz cut-off frequency of ultra thin InAlN/AlN/GaN MIS HEMT

Al₂O₃/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer