NDLI: Novel switching mechanism with angle dependent transmission through graphene based pn junction

Content Provider	IEEE Xplore Digital Library
Author	Sajjad, R.N. Ghosh, A.W.
Copyright Year	2013
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA (Sajjad, R.N.; Ghosh, A.W.)
Abstract	Graphene's exceptional electronic properties [1] have sparked tremendous amount of interest in the scientific community in the past decade. The linear energy dispersion leads to very low effective mass and ultra high mobility. This advantage of high mobility becomes useless due to lack of bandgap for digital logic applications[2] and any attempt to open bandgap degrades the mobility substantially. Among other exotic electronic properties, a unique facet of graphene electronics is its analogy with optics. At a graphene pn junction (GPNJ), the electron trajectories resemble optical refraction [3]. For graphene, the gate voltage plays the role of refractive index and this can be made negative easily leading to negative angle of refraction, similar to Veselago lens in optics with negative refractive index metamaterials. Another important analogy is total internal reflection (TIR), which occurs when carriers are unable to conserve the transverse wave-vector component due to lower gate voltage on the refracted side. We show that such electronic refraction governed by analogous Snell's law can be manipulated to modulate current with multiple pn junctions. Our calculations show that we can modulate current by many orders of magnitude without degrading mobility. We vary the number, shape and orientation of gates to introduce a transport gap in the graphene bandstructure similar to what was predicted in a different geometry with external tunnel barrier [5]. Atomistic Non-equilibrium Green's function (NEGF) calculation in experimentally relevant size range (~100nm) shows the current modulation from source to drain by changing gate voltage ratio across the junctions. The aforementioned effects require ballistic transport and suppressed edge scattering [4]. Recent experiment [6] indicates that such manipulation of carriers in graphene is possible (Fig 2).
Starting Page	107
Ending Page	108
File Size	407098
Page Count	2
File Format	PDF
ISBN	9781479908110
ISSN	15483770
e-ISBN	9781479908141
DOI	10.1109/DRC.2013.6633816
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-06-23
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Junctions Graphene Logic gates Doping Trajectory Reflection Geometry
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
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9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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