NDLI: Statistical analysis of BTI in the presence of process-induced voltage and temperature variations

Content Provider	IEEE Xplore Digital Library
Author	Firouzi, F. Kiamehr, S. Tahoori, M.B.
Copyright Year	2013
Description	Author affiliation: Dept. of Comput. Sci., Karlsruhe Inst. of Technol., Karlsruhe, Germany (Firouzi, F.; Kiamehr, S.; Tahoori, M.B.)
Abstract	In nano-scale regime, there are various sources of uncertainty and unpredictability of VLSI designs such as transistor aging mainly due to Bias Temperature Instability (BTI) as well as Process-Voltage-Temperature (PVT) variations. BTI exponentially varies by temperature and the actual supply voltage seen by the transistors within the chip which are functions of leakage power. Leakage power is strongly impacted by PVT and BTI which in turn results in thermal-voltage variations. Hence, neglecting one or some of these aspects can lead to a considerable inaccuracy in the estimated BTI-induced delay degradation. However, a holistic approach to tackle all these issues and their interdependence is missing. In this paper, we develop an analytical model to predict the probability density function and covariance of temperatures and voltage droops of a die in the presence of the BTI and process variation. Based on this model, we propose a statistical method that characterizes the life-time of the circuit affected by BTI in the presence of process-induced temperature-voltage variations. We observe that for benchmark circuits, treating each aspect independently and ignoring their intrinsic interactions results in 16% over-design, translating to unnecessary yield and performance loss.
Starting Page	594
Ending Page	600
File Size	331073
Page Count	7
File Format	PDF
ISBN	9781467330299
ISSN	21536961
e-ISBN	9781467330305
DOI	10.1109/ASPDAC.2013.6509663
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-01-22
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Mathematical model Delays Logic gates Threshold voltage Equations Transistors Degradation
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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