NDLI: New three dimensional doping profile for devices in subthreshold circuit

Content Provider	IEEE Xplore Digital Library
Author	Hossain, M. Chowdhury, M.H.
Copyright Year	2015
Description	Author affiliation: Comput. Sci. & Electr. Eng, Univ. of Missouri - Kansas City, Kansas City, MO, USA (Hossain, M.; Chowdhury, M.H.)
Abstract	One of the important aspects of integrated circuit design is the doping profile of a transistor along its length, width and depth. Devices for super-threshold circuit usually employ halo and retrograde doping profiles in the channel to eliminate many unwanted effects. Devices for subthreshold circuits do not require halo and retrograde doping profiles due to lower operating voltage. This will reduce the number of steps in the fabrication process, parasitic capacitance and substrate noise dramatically. This paper introduces a new doping profile for devices to be used in subthreshold circuits. The proposed scheme addresses doping variations along all the dimensions of the device. This new doping scheme proposes to employ Gaussian distribution of doping concentration along the length of the channel with highest concentration at the middle of the channel. The doping concentration across the depth of the device is exponentially decreasing with channel surface at the highest concentration. The proposed doping scheme keeps the doping concentration along the width of the device uniform. Results show that the optimized device with the proposed doping profile offers higher ON current in the subthreshold device.
Starting Page	1
Ending Page	4
File Size	437360
Page Count	4
File Format	PDF
e-ISBN	9781467365581
DOI	10.1109/MWSCAS.2015.7282037
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-08-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Doping profiles Logic gates Threshold voltage Capacitance MOSFET retrograde channel Subthreshold operation ultra-low-power circuit doping profile optimization halo doping
Content Type	Text
Resource Type	Article

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