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Content Provider | IEEE Xplore Digital Library |
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Author | Mizuguchi, T. Kano, H. |
Copyright Year | 1965 |
Abstract | We found a new spin-valve structure in which low coercivity coexists with high GMR ratio is substrate/Ta/NiFe/PtMn/CoFe/Ru/Ox/CoFe/Cu/CoFe/Cu/Ta-O. "Ox" means that Ru layer surface was exposed to oxygen gas. In this structure, the free layer is separated from the top specular layer by a copper layer and shows no increase in coercivity. Furthermore, the free layer was well oriented due to the thin oxide layer in the bottom pinned layer and the coercivity did not increase. After annealing at 295/spl deg/C, GMR and the exchange-bias field showed little change, which meant the oxide layers were stable. For the structure glass/Ta [3 nm]/NiFe [2 nm]/PtMn [10 nm]/CoFe [1.5 nm]/Ru [0.8 nm]/Ox/CoFe [2 nm]/Cu [2 nm]/CoFe [2 nm]/Cu [1 nm]Ta-O [1 nm], GMR ratio of 14.9% and change in sheet resistance of 3.3 ohms were obtained. The coercivity of the free layer exhibited 0.4 Oe. |
Sponsorship | IEEE Magnetics Society |
Starting Page | 1742 |
Ending Page | 1744 |
Page Count | 3 |
File Size | 82551 |
File Format | |
ISSN | 00189464 |
Volume Number | 37 |
Issue Number | 4 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2001-07-01 |
Publisher Place | U.S.A. |
Access Restriction | One Nation One Subscription (ONOS) |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Coercive force Copper Glass Annealing Surface morphology Iron Atomic force microscopy Surface resistance Scattering Oxidation |
Content Type | Text |
Resource Type | Article |
Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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