NDLI: Characteristics of Bloch line memory with major/minor-loop structure

Content Provider	IEEE Xplore Digital Library
Author	Mizuno, K. Matsutera, H. Kawahara, H. Hidaka, Y.
Copyright Year	1965
Abstract	The characteristics of the functions of a vertical Bloch line memory (VBL) with major/minor-loop structure and field access scheme, except for the detector, were investigated. The memory is composed of a major line with two-level conductor patterns, minor loops utilizing stabilized ring-shaped domains, and read/write gates with three-level conductor patterns. Bubbles generated at the bubble generator are propagated on the major line with greater than 4-mA drive current at 500-kHz frequency. Stretching of the ring-shaped domain head is well controlled by the presence or absence of a bubble in the major line. The round propagation for a VBL pair is achieved quasi-statically by a pulsed bias field with 6.5-Oe potential barrier for a 4.0- mu m-period track. Bias-field margins of 8.5 Oe for the minor loop and 13 Oe for the major line were obtained, verifying the feasibility of this device.<>
Sponsorship	IEEE Magnetics Society
Starting Page	2520
Ending Page	2522
Page Count	3
File Size	355188
File Format	PDF
ISSN	00189464
Volume Number	26
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1990-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Conducting materials Conductors Garnet films Magnetic domain walls Detectors Testing Magnetic domains Spirals Laboratories National electric code
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Stable multi-domain generation and gate operation for Bloch line memory

Experimental confirmation of fundamental functions for a novel Bloch line memory

A new method to stabilize multi-stripe domains for a Bloch line memory

Bloch line propagation on a ring-shaped domain by pulsed bias fields

Vertical Bloch line pair operation by in-plane field for Bloch line memory

Characteristics for Bloch line memory with field access scheme

-VBL replication error in Bloch line memory

Initiating stripe domains in Bloch line memory

Operation of major line bubble propagation path for Bloch line memory

Characteristics of Bloch line memory with major/minor-loop structure

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