NDLI: Magnetic properties of Fe-N/Si-N multilayer films

Content Provider	IEEE Xplore Digital Library
Author	Hoshi, Y. Naoe, M.
Copyright Year	1965
Abstract	Fe-N/Si-N multilayer films have been deposited by an opposed-target sputtering apparatus, and their structure and magnetic properties were investigated in detail. The multilayer films deposited at a proper nitrogen gas flow rate, R/sub N2/, have amorphous crystal structure and show excellent soft magnetic properties (coercive force of 0.6 Oe). The nitrogen atoms in the Fe-N layer of the film can move easily to the Si-N layer at temperatures below 200 degrees C if the Si-N layer contains a small amount of nitrogen. The interdiffusion of the metal atoms between the Fe-N layer and the Si-N layer can occur in the film by annealing at a temperature above 400 degrees C. In the film with nitrogen content above 20 at.%, the nitrogen content in the Fe-N layer changes very little even if the annealing is performed at a temperature above 600 degrees C and its layered structure can be kept stable. These results suggest that the Si-N layer can be used to realize multilayer films with good thermal stability. Annealing at a temperature above 400 degrees C can lead to a growth of crystallites in the film, which deteriorates the soft magnetic properties of these films.<>
Sponsorship	IEEE Magnetics Society
Starting Page	2344
Ending Page	2346
Page Count	3
File Size	320750
File Format	PDF
ISSN	00189464
Volume Number	26
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1990-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Magnetic properties Magnetic multilayers Magnetic films Nitrogen Temperature Annealing Atomic layer deposition Sputtering Fluid flow Amorphous materials
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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