NDLI: Comparison of Top-Gate and Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With the Same SiO<sub>2</sub>/a-InGaZnO/SiO<sub>2</sub> Stack

Content Provider	IEEE Xplore Digital Library
Author	Oh, S. Ju Heyuck Baeck Hyun Soo Shin Jong Uk Bae Kwon-Shik Park In Byeong Kang
Copyright Year	1980
Abstract	We demonstrate top-gate and bottom-gate structures of amorphous indium-gallium-zinc-oxide thin-film transistors and compare their device operation. A replica material stack is fabricated for depth profile characterization to correlate with device results. We mainly focus on the oxygen content at the top and bottom. Key process factors that affect device reliability are determined based on material analysis, subgap density-of-states extraction by monochromatic photonic capacitance-voltage technique, and device simulations. We found that top-gate devices are influenced by higher deep acceptor-like states under positive gate bias-temperature stress, whereas the bottom-gate devices suffer reliability degradation under negative gate bias-temperature stress due to the decrease in oxygen content at the bottom interface.
Sponsorship	IEEE Electron Devices Society
Starting Page	1037
Ending Page	1039
Page Count	3
File Size	1329077
File Format	PDF
ISSN	07413106
Volume Number	35
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Logic gates Thin film transistors Stress Materials Reliability subgap density of states (DOS) Amorphous InGaZnO (a-IGZO) thin-film transistor (TFT)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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