NDLI: Emission Mechanism and Bias-Dependent Emission Efficiency of Photons Induced by Drain Avalanche in Si MOSFET's

Content Provider	IEEE Xplore Digital Library
Author	Tsuchiya, T. Nakajima, S.
Copyright Year	1966
Description	Emission mechanism of photons induced by the drain avalanche in Si MOSFET's is discussed by analyzing the emission efficiency (defined by the ratio of the generated photon number to the avalanche-induced carrier number) dependence upon gate and drain voltages, which are found by both photomultiplier measurements and electrical measurements. The dependence are analyzed by using two-dimensional process-device simulator from the point of view of the bias dependence of Iateral (E/sub L/) and vertical (E/sub V/ ) electric fields in the channel near the drain. From the analysis, it is found that the bias dependence of emission efficiency can be explained by considering two-dimensional coexistence change of the avalanche-induced electrons and holes. It is concluded that the emission mechanism is the recombination of the avalanche-induced electrons and holes.
Sponsorship	IEEE Solid-State Circuits Society IEEE Electron Devices Society IEEE Circuits and Systems Society Japan Society of Applied Physics (JSAP) IEEE Microwave Theory and Techniques Society IEEE San Francisco Section Bay Area Council Univ. PA IEEE
Starting Page	325
Ending Page	332
Page Count	8
File Size	1435054
File Format	PDF
ISSN	00189200
Volume Number	20
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1985-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits P-n junctions Diodes Electric variables measurement Spontaneous emission Charge carrier processes Voltage Analytical models Electron emission Stimulated emission
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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