NDLI: Determining the drain doping in DMOS transistors using the hump in the leakage current

Content Provider	IEEE Xplore Digital Library
Author	Zupac, D. Anderson, S.R. Schrimpf, R.D. Galloway, K.F.
Copyright Year	1963
Abstract	The hump in the leakage current of double-diffused metal-oxide-semiconductor (DMOS) transistors observed for low drain voltages is explained. This hump is due to surface generation current of the gate-controlled diode formed by the base-drain p-n junction. The drain bias of the DMOS transistor is shown to have the same effect on the charge at the drain surface as the body bias in the conventional MOSFET. The body effect is used to develop a new method for determining the drain doping in DMOS transistors. This method is nondestructive, and does not require special test structures. Instead, electrical measurements are performed on conventional DMOS transistors. The method is ideally suited for determining the doping in the drain region of interest. Specifically, in DMOS transistors in which a surface implant is used to reduce the on-resistance, the method provides the doping concentration in the implanted region. In DMOS transistors which do not have the surface implant, the method yields the doping concentration in the drain epitaxial layer. In this study, the method is illustrated by determining the drain doping for six discrete power MOSFET device types from three different manufacturers.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	2326
Ending Page	2336
Page Count	11
File Size	1196232
File Format	PDF
ISSN	00189383
Volume Number	41
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Doping MOSFET circuits Implants Leakage current Low voltage Diodes P-n junctions Nondestructive testing Electric variables measurement Performance evaluation
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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