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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Pfiester, J.R. Shott, J.D. Meindl, J.D. |
| Copyright Year | 1966 |
| Description | An analytic MOST model has been developed to calculate accurately threshold voltage at submicrometer dimensions and to predict the sealing limits of digital CMOS circuits. Salient results show that for 2-V power-supply voltages, channel lengths as small as 0.14 /spl mu/m for static E/E CMOS, 0.20 /spl mu/m for static E/D CMOS, 0.29 /spl mu/m for dynamic transmission-gate CMOS, and 0.45 /spl mu/m for static E/D NMOS circuits are possible. At submicrometer dimensions, CMOS offers as much as a 3:1 sealing advantage in minimum channel length which translates to a 5:1 improvement in gate delay when compared to NMOS. Thus CMOS is projected as the dominant ULSI technology, not only due to its well known large operating margins, low static-power dissipation and design flexibility but also due to markedly superior speed. |
| Sponsorship | IEEE Solid-State Circuits Society IEEE Electron Devices Society IEEE Circuits and Systems Society Japan Society of Applied Physics (JSAP) IEEE Microwave Theory and Techniques Society IEEE San Francisco Section Bay Area Council Univ. PA IEEE |
| Starting Page | 253 |
| Ending Page | 263 |
| Page Count | 11 |
| File Size | 1797462 |
| File Format | |
| ISSN | 00189200 |
| Volume Number | 20 |
| Issue Number | 1 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1985-02-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Ultra large scale integration Silicon Boundary conditions Electrodes Dielectric constant Neodymium Solid state circuits Boron Gaussian processes Dielectrics and electrical insulation |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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