NDLI: A Multilevel Cell for STT-MRAM Realized by Capping Layer Adjustment

Content Provider	IEEE Xplore Digital Library
Author	Mengxing Wang Shouzhong Peng Yue Zhang Yu Zhang Youguang Zhang Qianfan Zhang Ravelosona, D. Weisheng Zhao
Copyright Year	1965
Abstract	A multilevel cell (MLC) allows gigabit high-density integration of a spin-transfer torque magnetic random-access memory (STT-MRAM). In this paper, we present an MLC structure based on MgO/CoFeB interfacial perpendicular magnetic anisotropy (PMA) and capping layer adjustment. The effect of capping layer toward interfacial PMA modulation has been investigated by first-principles calculations, which is consistent with the previous experimental results. Two methods have been proposed to realize this STT-MRAM MLC: 1) capping layer thickness and 2) material composition design. Using a physics-based compact model of perpendicular magnetic tunnel junctions, resistance-current curves with four-level resistance states are demonstrated, for which the threshold switching currents with clear separations prove the feasibility of this concept.
Sponsorship	IEEE Magnetics Society
Starting Page	1
Ending Page	4
Page Count	4
File Size	1376367
File Format	PDF
ISSN	00189464
Volume Number	51
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Magnetic tunneling Switches Perpendicular magnetic anisotropy Resistance Films Hafnium Capping layer Spin transfer torque Multi-level cell spin transfer torque multilevel cell (MLC) perpendicular magnetic anisotropy (PMA)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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