NDLI: Effect of Topological Bumpy Surface Underlayer on Compositionally Modulated Atomic Layer Stacking in High <inline-formula> <tex-math notation=LaTeX>${K}_{u}$ </tex-math></inline-formula> hcp Co<sub>80</sub>Pt<sub>20</sub> Film With (00.2) Crystallographic Texture Orientation

Content Provider	IEEE Xplore Digital Library
Author	Tham, K.K. Hinata, S. Saito, S.
Copyright Year	1965
Abstract	The effect of topological bumpy surface underlayer on compositionally modulated atomic layer stacking in high uniaxial magnetocrystalline anisotropy (K_u) hcp Co₈₀Pt₂₀ film with (00.2) crystallographic texture orientation was investigated. In this paper, the following has been discussed. Concerning preparation of underlayer with various morphologies, an annealing process prior to the deposition of Co₈₀Pt₂₀ film, and introduction of a metal-oxide buffer layer are effective to obtain underlayers with surface roughness ranging from ~0.4 to 2 nm and grain size ranging from ~6.7 to 12.5 nm. To realize a compositionally modulated atomic layer stacking structure, which is confirmed by the high angle annular dark field detector scanning transmission electron microscopy observation, an underlayer with surface roughness less than ~1 nm and/or grain size larger than ~8 nm is required. The compositional modulation shows the same normal direction as substrate normal and the c-axis direction of the hcp grain. To reach K_u of ~1.7 × 10⁷ erg/cm₃, surface roughness reduction to ~0.5 nm and grain size increase to ~12 nm are needed.
Sponsorship	IEEE Magnetics Society
Starting Page	1
Ending Page	4
Page Count	4
File Size	3086473
File Format	PDF
ISSN	00189464
Volume Number	51
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Rough surfaces Surface roughness Surface morphology Surface topography Films Surface treatment Grain size high K u CoPt film Perpendicular magnetic recording compositionally modulated atomic layer stacking, perpendicular magnetic recording Compositionally modulated atomic layer stacking CoPt film high $K_{u}$
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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