NDLI: Size Effect on Interlayer Coupling and Magnetoresistance Oscillation of Magnetic Tunnel Junction Embedded With Iron Nanoparticles

Content Provider	IEEE Xplore Digital Library
Author	Yen-Chi Lee Das, B. Te-Ho Wu Horng, L. Jong-Ching Wu
Copyright Year	1965
Abstract	Here, we investigate the size effect of perpendicular-anisotropic double-barrier magnetic tunnel junction (MTJ) devices embedded with iron nanoparticles. A sputtering system in conjunction with the postannealing process is employed to prepare the sheet film and standard lithography techniques followed by the ion etching technique are used to fabricate the micrometer to submicrometer MTJ devices. A strong ferromagnetic coupling is observed as we reduce the size of the device to submicrometer scale, which is due to the reduction of magnetostatic energy of the device. Furthermore, a magnetoresistance (MR) oscillation is observed at room temperature while reducing the size of the device. MR peaks at low bias fields are believed to have magnon contributions, whereas the peaks observed at higher bias fields are responsible for phonon-assisted tunneling. Zero-bias anomalies are also observed and are more prominent in antiparallel states of the devices.
Sponsorship	IEEE Magnetics Society
Starting Page	1
Ending Page	4
Page Count	4
File Size	937041
File Format	PDF
ISSN	00189464
Volume Number	51
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Magnetic tunneling Junctions Iron Nanoparticles Oscillators Magnetostatics Switches nanoparticle size effect perpendicular anisotropy Magnetic tunnel junction (MTJ) nanoparticles
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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