NDLI: The Effects of Drive-In Process Parameters on the Residual Stress Profile of the Boron-Doped Silicon Layer

Content Provider	The American Society of Mechanical Engineers (ASME) Digital Collection
Author	Jeong, Ok Chan Yang, Sang Sik
Copyright Year	2002
Abstract	The paper represents the effects of the drive-in process parameters on the residual stress profile of the p+ silicon film quantitatively. Since the residual stress profile is not uniform along the direction normal to the surface, the residual stress is assumed to be a polynomial function of the depth. All of the coefficients of the polynomial are determined from the deflections of cantilevers and the displacement of a rotating beam structure, which are measured with a surface profiler meter and a microscope. As the drive-in temperature or the drive-in time increases, the boron concentration decreases and the magnitude of the average residual tensile stress decreases. Also, near the surface of the p+ film the residual tensile stress is transformed into the residual compressive stress and its magnitude increases. The correlation coefficients between the residual stress profiles and the simulated boron concentration are calculated. As the drive-in time and temperature increase, all correlation coefficients become close to 1, and the boron concentration profiles after the drive-in process are similar to the stress profiles. Also, the lattice contractions of test wafers are measured by HRXRD (High Resolution X-Ray Diffractometry).
Sponsorship	Microelectromechanical Systems
Starting Page	173
Ending Page	178
Page Count	6
File Format	PDF
ISBN	0791836428
DOI	10.1115/IMECE2002-39242
Volume Number	Microelectromechanical Systems
Conference Proceedings	ASME 2002 International Mechanical Engineering Congress and Exposition
Language	English
Publisher Date	2002-11-17
Publisher Place	New Orleans, Louisiana, USA
Access Restriction	Subscribed
Subject Keyword	Temperature Deflection X-rays Semiconductor wafers Stress Displacement Cantilevers Rotating beams Boron Compressive stress Silicon Polynomials Tension Resolution (optics) Microscopes
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in