NDLI: Size and Frequency of Defects in Silicon MEMS

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Size and Frequency of Defects in Silicon MEMS

Content Provider	The American Society of Mechanical Engineers (ASME) Digital Collection
Author	David, A. Lavan Boyce, B. L. Buchheit, T. E.
Copyright Year	2002
Abstract	Mechanical testing of thin films for MEMS has progressed from a developmental stage to a point where validated techniques are used to study the behavior of devices and materials at a very fine scale. Tensile data covering a range of sizes and test techniques have been analyzed to examine the distribution of defects that would be responsible for the observed fracture strengths. For each sample, a critical defect size was calculated based on a published fracture toughness and a half-circular surface crack fracture toughness model. For polysilicon produced using the SUMMiT V process in the period 1998–1999, the calculated mean defect size was 115 nm. For polysilicon produced using the MUMPS process, the calculated mean defect size was 389 nm.
Sponsorship	Microelectromechanical Systems
Starting Page	573
Ending Page	576
Page Count	4
File Format	PDF
ISBN	0791836428
DOI	10.1115/IMECE2002-32393
Volume Number	Microelectromechanical Systems
Conference Proceedings	ASME 2002 International Mechanical Engineering Congress and Exposition
Language	English
Publisher Date	2002-11-17
Publisher Place	New Orleans, Louisiana, USA
Access Restriction	Subscribed
Subject Keyword	Microelectromechanical systems Thin films Fracture (process) Silicon Polysilicon Mechanical testing Fracture (materials) Surface cracks Fracture toughness
Content Type	Text
Resource Type	Article

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