NDLI: Characterization of the Crystallization and Grain Growth of Amorphous, Silicon Rich, Low Stress Silicon Nitride

Content Provider	The American Society of Mechanical Engineers (ASME) Digital Collection
Author	James, M. Olson
Copyright Year	2002
Abstract	Stoichiometric silicon nitride (Si3N4) serves a variety of functions in semiconductor manufacturing. The intrinsic component of the residual stress of a sub-set of this material, so-called low stress nitride (LSN), is a function of the excess Si present in the lattice. In microscopic electro-mechanical systems (MEMS), this material is used as an etch-stop, insulating material and foundation layer for a variety of complicated structures. Under a variety of processing conditions, localized regions of LSN are susceptible to crystallization. In some cases, the crystallization event may form a region of low electrical resistance leading to electrical shorts in MEMs devices and other problems. The crystallization event is explained by a reduction in thermodynamic free energy brought about by the presence of a potential energy barrier lowering catalyst. Catalysts are shown to include but are not limited to inhomogeneities in the distribution of dopant species and seed particles located at the free-surface or interface between the LSN and a capping layer. Following crystallization, the growth front propagates by precipitation of excess Si ahead of the growing crystalline region. As in all grain growth/crystallization events, the event is driven by time and temperature.
Sponsorship	Microelectromechanical Systems
Starting Page	165
Ending Page	172
Page Count	8
File Format	PDF
ISBN	0791836428
DOI	10.1115/IMECE2002-33300
Volume Number	Microelectromechanical Systems
Conference Proceedings	ASME 2002 International Mechanical Engineering Congress and Exposition
Language	English
Publisher Date	2002-11-17
Publisher Place	New Orleans, Louisiana, USA
Access Restriction	Subscribed
Subject Keyword	Microelectromechanical systems Potential energy Silicon nitride ceramics Insulation Temperature Catalysts Crystallization Electrical resistance Etching Electromechanical systems Stress Precipitation Particulate matter Integrated circuit fabrication Silicon
Content Type	Text
Resource Type	Article

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