NDLI: Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice-matched AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistor

Content Provider	IET Digital Library
Author	Jena, Kanjalochan Swain, Raghunandan Lenka, Trupti Ranjan
Abstract	In this paper, the authors present a polarisation dependent analytical model for DC, radio frequency (RF) and linearity characteristics of a proposed lattice-matched AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistor (MOSHEMT). The developed model includes charge controlled analysis derived from triangular potential well approximation along with the spontaneous and piezoelectric polarisation effects. The model accurately predicts the threshold voltage, two-dimensional electron gas sheet charge density, drain current, transconductance and cut-off frequencies for different samples of gate dielectric materials such as SiO2, HfO2 and Al2O3 over a full range of gate and drain bias. A detailed analysis of the linearity characteristics by investigating the key figure-of-merit metrics such as second-order voltage intercept point, third-order voltage intercept point, third-order input intercept point and third-order intermodulation distortion are performed for different gate dielectric thicknesses of 5, 7 and 10 nm. The accuracy of the model results is verified against Silvaco Technology Computer Aided Design numerical simulation results and found to be satisfactory. It is observed that by careful tuning the device parameters such as dielectric constant and dielectric thickness, lattice-matched AlInN/AlN/GaN MOSHEMT can considerably improve the device performance and suitable for high performance low distortion RF applications.
Starting Page	423
Ending Page	432
Page Count	10
ISSN	1751858X
Volume Number	10
e-ISSN	17518598
Issue Number	Issue 5, Sep (2016)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-cds/10/5
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-cds.2015.0332
Journal	IET Circuits, Devices & Systems
Publisher Date	2016-09-01
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	AlInN−AlN−GaN Aluminium Compound Charge Controlled Analysis DC Characteristic Dielectric Constant Dielectric Material And Property Dielectric Polarisation Dielectric Thickness Drain Current Electromagnetic Compatibility Field Effect Device Gallium Compound High Electron Mobility Transistors III-V SemiConductor Indium Compound Interference Intermodulation Distortion Lattice-matched Metal–oxide–semiconductor High Electron Mobility Transistor Linearity Characteristic Modulation And Coding Method MOSHEMT Photonic Technology Piezoelectric Polarisation Effect Radiofrequency Characteristic Second-order Voltage Intercept Point Size 5 Nm to 10 Nm Spontaneous Polarisation Effect Thin Gate Dielectrics Third-order Input Intercept Point Third-order Intermodulation Distortion Third-order Voltage Intercept Point Threshold Voltage Transconductance Triangular Potential Well Approximation Two-dimensional Electron Gas Two-dimensional Electron Gas Sheet Charge Density Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Control and Systems Engineering Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Linearity improvement in E-mode ferroelectric GaN MOS-HEMT using dual gate technology

Linearity of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors

Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect

A $delta$-Doped InGaP/InGaAs pHEMT With Different Doping Profiles for Device-Linearity Improvement

Using the Gate–Bulk Interaction and a Fundamental Current Injection to Attenuate IM3 and IM2 Currents in RF Transconductors

Design optimisation of AlGaN/GaN metal insulator semiconductor high electron mobility transistor with high-K/low-K compound gate dielectric layer for millimeter-wave application

Cancellation of second-order intermodulation distortion and enhancement of IIP2 in common-source and common-emitter RF transconductors

75 nm T-shaped gate for In0.17Al0.83N/GaN HEMTs with minimal short-channel effect

Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice-matched AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistor

Similar Documents

Linearity improvement in E-mode ferroelectric GaN MOS-HEMT using dual gate technology

Linearity of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors

Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect

A $delta$-Doped InGaP/InGaAs pHEMT With Different Doping Profiles for Device-Linearity Improvement

Using the Gate–Bulk Interaction and a Fundamental Current Injection to Attenuate IM3 and IM2 Currents in RF Transconductors

Design optimisation of AlGaN/GaN metal insulator semiconductor high electron mobility transistor with high-K/low-K compound gate dielectric layer for millimeter-wave application

Cancellation of second-order intermodulation distortion and enhancement of IIP2 in common-source and common-emitter RF transconductors

75 nm T-shaped gate for In0.17Al0.83N/GaN HEMTs with minimal short-channel effect

Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice-matched AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistor