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| Content Provider | IET Digital Library |
|---|---|
| Author | Du, Jiangfeng Hou, Zehong Pan, Peilin Bai, Zhiyuan Yu, Qi |
| Abstract | A novel high DC and radio-frequency (RF) characteristics AlGaN/GaN metal insulator semiconductor high electron mobility transistor (MIS-HEMT) with a high-K/low-K compound gate dielectric layer (CGD) is proposed. Owing to the different dielectric constants, the discontinuity of the electric field at the high-K/low-K interface can modulate the distribution of the electric field along the channel under gate. Hence, enhancement of DC and RF characteristics can be achieved. The optimised results of the AlGaN/GaN MIS-HEMT with CGD structure revealed that the DC transconductance gm and the maximum saturation current Ids increased about 10.5 and 6.9% compared with the traditional AlGaN/GaN MIS-HEMT with single high-K gate dielectric layer (SGD), respectively. Also, the cutoff frequency ft and the maximum oscillation frequency f max of 74.2 GHz and 129.2 GHz are obtained and improved about 18.5 and 14.7% compared with the device with SGD structure. |
| Starting Page | 503 |
| Ending Page | 507 |
| Page Count | 5 |
| Volume Number | 11 |
| e-ISSN | 17500443 |
| Issue Number | Issue 9, Sep (2016) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/mnl/11/9 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/mnl.2016.0370 |
| Journal | Micro & Nano Letters |
| Publisher Date | 2016-09-01 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | AlGaN-GaN Aluminium Compound CGD Structure Cutoff Frequency DC Transconductance Design Optimisation Dielectric Constant Dielectric Material And Property Electric Field Discontinuity Field Effect Device Gallium Compound Gate Dielectric Layer High Electron Mobility Transistors III-V SemiConductor Maximum Oscillation Frequency Maximum Saturation Current Millimeter Wave Application MIS Device MIS-HEMT Optimisation Optimisation Technique Photonic Technology Radiofrequency Characteristic Wide Band Gap SemiConductor |
| Content Type | Text |
| Resource Type | Article |
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