High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors

Content Provider	Semantic Scholar
Author	Xie, Jinqiao Ni, Xianfeng Leach, Jacob H. Özgür, Ümit Morkoç, Hadis
Copyright Year	2007
Abstract	High electron mobility was achieved in Al1−xInxN∕AlN∕GaN (x=0.20–0.12) heterostructure field effect transistors (HFETs) grown by metal-organic chemical vapor deposition. Reduction of In composition from 20% to 12% increased the room temperature equivalent two-dimensional-electron-gas density from 0.90×1013to1.64×1013cm−2 with corresponding electron mobilities of 1600 and 1410cm2∕Vs, respectively. The 10K mobility reached 17600cm2∕Vs for the nearly lattice-matched Al0.82In0.18N∕AlN∕GaN heterostructure with a sheet carrier density of 9.6×1012cm−2. For comparison, the AlInN∕GaN heterostructure without the AlN spacer exhibited a high sheet carrier density (2.42×1013cm−2) with low mobility (120cm2∕Vs) at room temperature. The high mobility in our samples is in part attributed to ∼1nm AlN spacer which significantly reduces the alloy scattering as well as provides a smooth interface. The HFETs having gate dimensions of 1.5×40μm2 and a 5μm source-drain separation exhibited a maximum transconductance of ∼200mS∕mm ...
Starting Page	132116
Ending Page	132116
Page Count	1
File Format	PDF HTM / HTML
DOI	10.1063/1.2794419
Volume Number	91
Alternate Webpage(s)	https://scholarscompass.vcu.edu/cgi/viewcontent.cgi?article=1045&context=egre_pubs&httpsredir=1&referer=
Alternate Webpage(s)	https://doi.org/10.1063/1.2794419
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article