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| Content Provider | IET Digital Library |
|---|---|
| Author | Panda, Deepak Kumar Lenka, Trupti Ranjan |
| Abstract | In this work, an enhancement mode dual gate ferroelectric gallium nitride metal oxide semiconductor-high electron mobility transistor (GaN MOS-HEMT) is proposed with enhanced linearity characteristics. The different DC characteristics of the device are analysed and compared with available experimental data of single gate un-recessed ferroelectric GaN MOS-HEMT. In order to analyse the linearity performance of the devices, a look up table-based large signal model is developed directly from technology computer-aided device simulation results built by feeding different small signal parameters. The different linearity characteristics such as input third-order intercept point (IIP3), the input gain compression point (P1dB), third-order intermodulation (IM3) and the carrier to intermodulation power ratio of both the devices are compared by harmonic balance simulation of the developed large signal models. The interlink between IIP3 and IM3 with transconductance indicates that the broader the transconductance distribution with respect to different gate voltage generates higher IIP3 and lower IM3, which results in an improved linearity performance. The dual gate device shows improved linearity performance resulting in applicability in radiofrequency front end receiver. |
| Starting Page | 618 |
| Ending Page | 622 |
| Page Count | 5 |
| Volume Number | 14 |
| e-ISSN | 17500443 |
| Issue Number | Issue 6, May (2019) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/mnl/14/6 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/mnl.2018.5499 |
| Journal | Micro & Nano Letters |
| Publisher Date | 2019-05-29 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Carrier to Intermodulation Power Ratio DC Characteristic Dual Gate Device Dual Gate Technology E-mode Ferroelectric MOS-HEMT Enhanced Linearity Characteristic Enhancement Mode Dual Gate Ferroelectric Gallium Nitride Metal Oxide Semiconductor-high Electron Mobility Transistor Ferroelectric Device Gallium Compound GaN Gate Voltage Harmonic Balance Simulation High Electron Mobility Transistors III-V SemiConductor Improved Linearity Performance Input Gain Compression Point Input Third-order Intercept Point Insulated Gate Field Effect Transistors Intermodulation Distortion Linearity Improvement Look Up Table-based Large Signal Model MOSFET Radiofrequency Front-end Receiver Single Gate Un-recessed Ferroelectric MOS-HEMT Small Signal Parameter Technology Computer-aided Device Simulation Third-order Intermodulation Transconductance Distribution Wide Band Gap SemiConductor |
| Content Type | Text |
| Resource Type | Article |
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