NDLI: Enhanced conductivity of anatase TiO2 nanowires by La and Co co-doping

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Enhanced conductivity of anatase TiO2 nanowires by La and Co co-doping

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The Journal of Engineering

Enhanced conductivity of anatase TiO2 nanowires by La and Co co-doping

Content Provider	IET Digital Library
Author	Li, Shanying Wang, Zhenxin Yang, Yilong Li, Jie Jin, Chi
Abstract	In this work, the conductivity of anatase titanium dioxide (TiO2) nanowires was enhanced by lanthanum (La) and cobalt (Co) co-doping method. The nanowires were synthesised via a facile solvothermal process. The diameter of as-synthesised nanowires is about 300 nm and length more than 20 μm. The electrical properties were studied based on single nanowire field-effect transistor; the anatase TiO2 nanowires exhibit n-type conductivity with mobility of 2.18 cm2 V−1 S−1 and carrier concentration of 1.95 × 1018 cm−3. Doping of rare earth element La and transition element Co can not only reduce bandgap, but also reduce electron–hole recombination and improve carrier concentration. The distinct electrical properties of doped nanowires will open new opportunities for the application of anatase TiO2 semiconductor materials in nanoelectronics devices.
Starting Page	226
Ending Page	229
Page Count	4
Volume Number	15
e-ISSN	17500443
Issue Number	Issue 4, Apr (2020)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/mnl/15/4
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/mnl.2019.0621
Journal	Micro & Nano Letters
Publisher Date	2020-04-01
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Anatase TiO2 Semiconductor Materials Anatase Titanium Dioxide Nanowires As-synthesised Nanowires Bandgap Carrier Concentration Carrier Density Carrier Mobility Charge Carriers Cobalt Cobalt Codoping Method Doped Nanowires Doping And Implantation of Impurities Electrical Conductivity Electrical Property Electrical Property of Other Inorganic Semiconductors (thin Films/low-dimensional Structures) Electron-hole Recombination Facile Solvothermal Process Field Effect Device Field Effect Transistors Generation Insulator Lanthanum Lanthanum Codoping Method Lifetime And Trapping Low-Dimensional Structure: Growth, Structure And Nonelectronic Property Low-field Transport And Mobility N-type Conductivity Nanoelectronics Nanoelectronics Device Nanofabrication Nanometre-Scale Semiconductor Fabrication Technology NanoParticle Nanotube And Nanostructured Material Nanowires Oxide And Ferrite SemiConductor Piezoresistance Rare Earth Element Doping Recombination Semiconductor Semiconductor Doping Semiconductor Growth SemiConductor/Insulator Single Nanowire Field-effect Transistor Structure of Solid Clusters TiO2:La,Co Titanium Compound Transition Element Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article

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