NDLI: Analytical modelling and performance analysis of gate engineered TG silicon-on-nothing metal–oxide

Content Provider	IET Digital Library
Author	Banerjee, Pritha Saha, Priyanka Sarkar, Subir K.
Abstract	This study presents a three-dimensional (3D) analytical model of triple material tri-gate silicon-on-nothing metal–oxide–semiconductor field-effect transistor. The performance of the device by varying the different device parameters as well as the device's immunity toward the various short channel effects such as Drain-induced barrier lowering (DIBL), hot carrier effect, threshold-voltage roll-off and subthreshold swing are investigated. The 3D Poisson's equation with appropriate boundary conditions is solved considering the parabolic potential approximation method to obtain the surface potential distribution. In addition, the calculations for threshold voltage and electric field are also done and the results obtained are verified using a 3D device simulator, namely ATLAS from SILVACO.
Starting Page	557
Ending Page	562
Page Count	6
ISSN	1751858X
Volume Number	12
e-ISSN	17518598
Issue Number	Issue 5, Sep (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-cds/12/5
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-cds.2017.0473
Journal	IET Circuits, Devices & Systems
Publisher Date	2018-03-07
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	3D Analytical Model 3D Device Simulator 3D Poisson's Equation Approximation Theory ATLAS Design And Testing DIBL Differential Equation (numerical Analysis) Electric Field Elemental Semiconductor Equivalent Circuit Gate Engineered Triple Material Trigate Silicon-on-nothing MOSFET Hot Carrier Effect Hot Carriers Insulated Gate Field Effect Transistors Interpolation And Function Approximation Metal-oxide-semiconductor Field Effect Transistor MOSFET Numerical Analysis Parabolic Potential Approximation Method Poisson Equation Semiconductor Device Model Semiconductor Device Modelling Short Channel Effect Silicon SILVACO SON Subthreshold Swing Surface Potential Surface Potential Distribution Three-dimensional Analytical Model Threshold-voltage Roll-off
Content Type	Text
Resource Type	Article
Subject	Control and Systems Engineering Electrical and Electronic Engineering

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