NDLI: Advanced hexagonal layout design for split-gate reduced surface field stepped oxide U-groove metal–oxide

Content Provider	IET Digital Library
Author	Ying, Wang Fan, Hu Hai Hao, Yu Cheng Tong, Wei Jia
Abstract	Split-gate reduced surface field (RESURF) stepped oxide (SGRSO) device with advanced hexagonal p-pillar (AHP) layout is investigated using three-dimensional simulations. The AHP layout can improve the on-state characteristics while not increasing the process difficulty. The p-pillar under the source electrode enhances the RESURF effect to the n-drift region, so that the n-drift region doping concentration could be substantially increased and the breakdown voltage is not reduced. Based on the SGRSO device, the AHP layout modifies the electric field distribution in the n-drift region, and reduces the R SP as compared with the common hexagonal and mesa strip layout structures. The figure of merit of the AHP layout improves by 49.8% as compared with the other two types of layouts, and the AHP has superior characteristics within a wider N D range.
Starting Page	678
Ending Page	684
Page Count	7
ISSN	17554535
Volume Number	8
e-ISSN	17554543
Issue Number	Issue 5, May (2015)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-pel/8/5
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-pel.2013.0975
Journal	IET Power Electronics
Publisher Date	2015-03-24
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Advanced Hexagonal Layout Design Advanced Hexagonal P-pillar Layout Breakdown Voltage Design And Testing Doping Concentration Electric Field Distribution Equivalent Circuit Insulated Gate Field Effect Transistors MOSFET N-drift Region On-state Characteristic Semiconductor Device Breakdown Semiconductor Device Model Semiconductor Device Modelling Semiconductor Doping Split-gate Reduced Surface Field Stepped Oxide Device Stepped Oxide U-groove Metal–oxide–semiconductor Field-effect Transistor Three-dimensional Simulations
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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