NDLI: Fabrication and characterisation of Al gate n-metal–oxide–semiconductor field-effect transistor, on-chip fabricated with silicon nitride ion-sensitive field-effect transistor

Content Provider	IET Digital Library
Author	Chaudhary, Rekha Sharma, Amit Sinha, Soumendu Yadav, Jyoti Sharma, Rishi Mukhiya, Ravindra Khanna, Vinod K.
Abstract	In the present study, temperature drift analysis of metal–oxide–semiconductor field-effect transistor (MOSFET) is carried out using silicon nitride/SiO2 as dielectric film. An n-channel depletion-mode MOSFET was fabricated with silicon nitride ion-sensitive field-effect transistor (ISFET) on the same wafer. The study presents the fabrication, simulation and characterisation of MOSFET. The gate of the ISFET is stacked with silicon nitride/SiO2 sensing membrane that was deposited using low pressure chemical vapour deposition. Output and transfer characteristics of on-chip fabricated Al gate MOSFET were obtained in order to study the fabricated ISFET behaviour to be used as pH sensor. Silicon nitride is preferred over SiO2 sensing film/dielectric (in case of MOSFET) which has better sensitivity and low drift. Process and device simulations were performed using Silvaco® TCAD tool.
Starting Page	268
Ending Page	272
Page Count	5
ISSN	17518601
Volume Number	10
e-ISSN	1751861X
Issue Number	Issue 5, Sep (2016)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-cdt/10/5
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-cdt.2015.0174
Journal	IET Computers & Digital Techniques
Publisher Date	2016-09-01
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Aluminium Aluminum Gate N-metal-oxide-semiconductor Field-effect Transistor Chemical Sensor Chemical Vapour Deposition Chemical Variables Measurement Device Simulations Dielectric Film Dielectric Thin Films Insulated Gate Field Effect Transistors Ion Sensitive Field Effect Transistors ISFET Behaviour Low Pressure Chemical Vapour Deposition MOSFET N-channel Depletion-mode MOSFET Sensing Film Sensing Membrane Silicon Compound Silicon Nitride Ion-sensitive Field-effect Transistor Silvaco TCAD Tool SiN-SiO2
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering Hardware and Architecture Software

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