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| Content Provider | IET Digital Library |
|---|---|
| Author | Japa, Aditya Majumder, Manoj Kumar Sahoo, Subhendu K. Vaddi, Ramesh |
| Abstract | This study presents a true random number generator (TRNG) harvesting random bits from delay variations of ambipolarity-based ring oscillator, designed using 20 nm InAs Tunnel FET (TFET). Exploiting the TFET transmission gate (TG) functional failure, TFET ambipolarity-based ring oscillator design has been proposed. Random variations are observed in the oscillating frequency of proposed ring oscillator by changing the TFET device ambipolarity. Exploring the same, a TFET ambipolarity-based TRNG circuit has been demonstrated. XOR gate-based post-processing unit is designed to further enhance the unpredictability and randomness of the output bits. The proposed TRNG has passed various NIST tests performed at a supply voltage of 0.5 V. In 20 nm, the proposed TFET TRNG has an area as low as 90 pm2 and consumes 5.4 pJ/bit at 0.5 V supply voltage. Ambipolarity-based circuit design makes the proposed TRNG robust against reverse engineering attacks. |
| Starting Page | 689 |
| Ending Page | 695 |
| Page Count | 7 |
| ISSN | 1751858X |
| Volume Number | 13 |
| e-ISSN | 17518598 |
| Issue Number | Issue 5, Aug (2019) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/iet-cds/13/5 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/iet-cds.2018.5297 |
| Journal | IET Circuits, Devices & Systems |
| Publisher Date | 2019-03-07 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Ambipolarity-based Circuit Design Analogue Circuit Design Delay Variations Digital Circuit Design, Modelling And Testing Energy Conservation Failure Analysis Field Effect Transistors III-V SemiConductor InAs Indium Compound Logic And Switching Circuit Logic Circuit Logic Design Method Logic Element Logic Gate Modelling NIST Tests Oscillating Frequency Oscillator Random Number Generation Random Number Generator Harvesting Random Bits Random Variations Reliability Reverse Engineering Reverse Engineering Attack Robust True Random Number Generator Size 20.0 Nm Testing TFET Ambipolarity-based Ring Oscillator Design TFET Ambipolarity-based TRNG Circuit TFET Device Ambipolarity TFET Transmission Gate Functional Failure TFET TRNG Tunnel FET Ambipolarity-based Energy Efficient True Random Number Generator Tunnel Transistors Voltage 0.5 V XOR Gate-based Post-processing Unit Design |
| Content Type | Text |
| Resource Type | Article |
| Subject | Control and Systems Engineering Electrical and Electronic Engineering |
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