NDLI: Design of a novel structure capacitive RF MEMS switch to improve performance parameters

Content Provider	IET Digital Library
Author	Kondaveeti, Girija Sravani Guha, Koushik Karumuri, Srinivasa Rao Elsinawi, Ameen
Abstract	This study reports the design and analysis of novel step structure RF micro-electromechanical system (MEMS) switch for low pull-in voltage, low insertion loss and high isolation by using uniform single meander. The central beam of the membrane is designed with 0.5 µm lower than the side beams to form a step-down structure which reduces the pull-in voltage. Stress analysis, electromechancial, switching time, quality factor and RF analysis have done to understand the behavioural characteristics of the proposed step-down switch. The analysis has been carried out for different beam and dielectric materials among them switch with gold material exhibits low pull-in voltage of 4.7 V, low insertion loss <1 dB and high isolation of −38.3 dB at 28.2 GHz for silicon nitride. The switch also shows good quality factor of 0.95 for gold material along with high capacitance ratio of 132. The upstate capacitance of 56.8 pF contributes low return loss and made the switch to transmit the signal up to 26.2 GHz and provides 7.2 pF of downstate capacitance to produce high isolation at 26.2 GHz which is efficiently used for K-band satellite applications.
Starting Page	1093
Ending Page	1101
Page Count	9
ISSN	1751858X
Volume Number	13
e-ISSN	17518598
Issue Number	Issue 7, Oct (2019)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-cds/13/7
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-cds.2019.0206
Journal	IET Circuits, Devices & Systems
Publisher Date	2019-07-12
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Capacitance 56.8 PF Capacitance 7.2 PF Capacitive RF MEMS Switch Central Beam Design And Modelling of MEMS And NEMS Device Dielectric Material Downstate Capacitance Frequency 28.2 GHz Gold Gold Material High Capacitance Ratio K-band Satellite Application Low Insertion Loss Low Return Loss Microswitches Microwave IC Microwave Switches Pull-in Voltage Q Factor Quality Factor Radiofrequency Integrated Circuit Relay And Switches RF Analysis RF Microelectromechanical System Si3N4 Silicon Compound Silicon Nitride Step-down Structure Stress Analysis Uniform Single Meander Upstate Capacitance
Content Type	Text
Resource Type	Article
Subject	Control and Systems Engineering Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Ka-band RF MEMS capacitive switch with low loss, high isolation, long-term reliability and high power handling based on GaAs MMIC technology

Probing contactless injection dielectric charging in RF MEMS capacitive switches

Multi-resonant capacitive microelectromechanical system switch with high isolation for ultra-wideband applications

Capacitive RF MEMS Switches With Tantalum-Based Materials

Novel Miniaturized RF MEMS Staircase Switch Matrix

Design and optimisation of a novel structure capacitive RF MEMS switch to integrate with an antenna to improve its performance parameters

Wideband CMOS Compatible Capacitive MEMS Switch for RF Applications

Multi-contact radiofrequency microelectromechanical systems switch with power divider/combiner structure for high power applications

One to 40 GHz ultra-wideband RF MEMS direct-contact switch based on GaAs MMIC technique

Design of a novel structure capacitive RF MEMS switch to improve performance parameters

Similar Documents

Ka-band RF MEMS capacitive switch with low loss, high isolation, long-term reliability and high power handling based on GaAs MMIC technology

Probing contactless injection dielectric charging in RF MEMS capacitive switches

Multi-resonant capacitive microelectromechanical system switch with high isolation for ultra-wideband applications

Capacitive RF MEMS Switches With Tantalum-Based Materials

Novel Miniaturized RF MEMS Staircase Switch Matrix

Design and optimisation of a novel structure capacitive RF MEMS switch to integrate with an antenna to improve its performance parameters

Wideband CMOS Compatible Capacitive MEMS Switch for RF Applications

Multi-contact radiofrequency microelectromechanical systems switch with power divider/combiner structure for high power applications

One to 40 GHz ultra-wideband RF MEMS direct-contact switch based on GaAs MMIC technique

Design of a novel structure capacitive RF MEMS switch to improve performance parameters