NDLI: Second-order non-quasi-static, compact model of field-effect transistor revealing terminal rectification beyond their cutoff frequency

Content Provider	IET Digital Library
Author	Ayoub, Ahmed B. Ibrahim, Nihal Y. Elnahwy, Salah E. A.
Abstract	Recent applications in terahertz imaging, spectroscopy, and communications have been driving the need to increase the operation frequency of field-effect transistors (FETs). However, beyond their cutoff, FETs where recently shown to operate as a second-order rectifier. Despite the developments in this field, the physical models for this phenomenon are mostly ideal and limited in their scope. This has limited the design of transistors, due to the lack of enough insight into the contribution of the different elements of a realistic device. This work develops a physics-based spice compact model of the FET capable of extracting the traditional DC and AC outputs, as well as the second-order rectification (SOR) response, that is valid in all regions of transistor operation. This model is used to study the development of the SOR response within the channel and its boundaries. Unlike other models of this device, the authors’ model shows the evidence that the channel of the transistor does not contribute to the rectified output. Instead, the boundary conditions and elements are the source of the SOR response. These results have a high implication on the design of FETs operating beyond their cutoff frequency.
Starting Page	660
Ending Page	666
Page Count	7
ISSN	1751858X
Volume Number	14
e-ISSN	17518598
Issue Number	Issue 5, Aug (2020)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-cds/14/5
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-cds.2019.0127
Journal	IET Circuits, Devices & Systems
Publisher Date	2020-03-03
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Design And Testing Equivalent Circuit FET Field Effect Transistors Field-effect Transistor Insulated Gate Field Effect Transistors Physics-based Spice Compact Model Rectification Second-order Rectification Response Second-order Rectifier Semiconductor Device Model Semiconductor Device Modelling Terahertz Imaging Terminal Rectification
Content Type	Text
Resource Type	Article
Subject	Control and Systems Engineering Electrical and Electronic Engineering

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