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| Content Provider | IET Digital Library |
|---|---|
| Author | Chu, Chenlei Liao, Xiaoping |
| Abstract | This study reports a bent cantilever radio frequency microelectromechanical system power detector with improved linearity up to 1 W. The proposed device employs an upward bent cantilever for power detection. The novelty of this structure is that the bend of this kind in cantilever can realize the compensation for non-linear saturation at high power level effectively. As a result, the linearity will be improved on the condition of high power detection. An equivalent circuit model of mechanical principle is established to analyse the bent cantilever behaviour. The whole device is fabricated using GaAs microwave monolithic integrated circuit technology. The bent cantilever is constructed to overcome the stress gradient during deep etching releasing process. Measurement results prove the improved linearity from 100 mW to 1 W and the corresponding sensitivity is 2.8 aF/mW at 10 GHz. |
| Starting Page | 1732 |
| Ending Page | 1736 |
| Page Count | 5 |
| ISSN | 17518725 |
| Volume Number | 13 |
| e-ISSN | 17518733 |
| Issue Number | Issue 10, Aug (2019) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/iet-map/13/10 |
| Journal | IET Microwaves, Antennas & Propagation |
| Publisher Date | 2019-04-12 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Bent Cantilever Behaviour Cantilevers Deep Etching Releasing Process Design And Modelling of MEMS And NEMS Device Fabrication of MEMS And NEMS Device Frequency 10.0 GHz GaAs GaAs Microwave Monolithic Integrated Circuit Gallium Arsenide High Power Detection High Power Level III-V SemiConductor Micromechanical Device Microwave IC MMIC Monolithic IC Nonlinear Saturation Radio Frequency Microelectromechanical System Stress Gradient Upward Bent Cantilever |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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