NDLI: Modelling of crosstalk in differential through silicon vias for three-dimensional integrated circuits

Content Provider	IET Digital Library
Author	Pan, Jin Wei Fu, Kai Liu, Qi Zhao, Wen Sheng Dong, Linxi Wang, Gaofeng
Abstract	The crosstalk effects of differential through silicon vias (D-TSVs) are studied. The equivalent circuit model is developed, with the circuit elements extracted analytically. Using the three-dimensional (3D) full-wave field solver HFSS, the circuit model is validated up to 100 GHz. By virtue of the circuit model, the noise couplings in the D-TSVs are evaluated. It is found that the noise coupling can be cancelled in the D-TSVs for a particular case. Finally, the influence of floating silicon substrate on the crosstalk in the D-TSVs is investigated.
Starting Page	1529
Ending Page	1535
Page Count	7
ISSN	17518725
Volume Number	13
e-ISSN	17518733
Issue Number	Issue 10, Aug (2019)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-map/13/10
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-map.2018.5297
Journal	IET Microwaves, Antennas & Propagation
Publisher Date	2019-05-14
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	3D HFSS Circuit Element Crosstalk Crosstalk Effects D-TSVs Differential Through Silicon Vias Electromagnetic Compatibility Equivalent Circuit Equivalent Circuit Model Floating Silicon Substrate Integrated Circuit Modelling Integrated Circuit Noise Interference Interference Suppression Layout Modelling And Testing Noise Coupling Semiconductor Integrated Circuit Design Silicon Silicon Substrate Three-dimensional Full-wave Field Solver HFSS Three-dimensional Integrated Circuit
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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