NDLI: Inline capacitive RF power sensor based on floating MEMS beam for GaAs MMIC applications

Content Provider	IET Digital Library
Author	Zhang, Zhiqiang Liao, Xiaoping
Abstract	A 0.01–20 GHz inline capacitive radio frequency (RF) power sensor with a floating microelectromechanical system (MEMS) beam is proposed. It is based on sensing the capacitance change of the MEMS beam above the coplanar waveguide line due to the electrostatic force. In the design, anchors of the MEMS beam are floating for accurate capacitive detection and flexible for increasing the sensitivity, and an impedance matching technique is utilised to improve the microwave performance. The fabrication of this sensor is compatible with the GaAs monolithic microwave integrated circuits (MMICs) process. The measured reflection loss of the capacitive sensor is <−18 dB, whereas the insertion loss is better than −0.38 dB up to 20 GHz. Experiments show that approximate linear relationships between the measured capacitance change and the input RF power are obtained, and the resulting average sensitivities are 120.8, 76.7, 87.6 and 61.0 aF/mW at 5, 10, 15 and 20 GHz, respectively.
Starting Page	1292
Ending Page	1294
Page Count	3
ISSN	00135194
Volume Number	50
e-ISSN	1350911X
Issue Number	Issue 18, Aug (2014)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/50/18
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2014.2345
Journal	Electronics Letters
Publisher Date	2014-08-19
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Capacitive Detection Coplanar Waveguide Coplanar Waveguide Line Electrostatic Force Electrostatics Fabrication of MEMS And NEMS Device Floating MEMS Beam Floating Microelectromechanical System Beam Frequency 0.01 GHz to 20 GHz GaAs Gallium Arsenide Gallium Arsenide MMIC Application Gallium Arsenide Monolithic Microwave Integrated Circuit Process III-V SemiConductor Impedance Matching Impedance Matching Technique Inline Capacitive Radiofrequency Power Sensor Inline Capacitive RF Power Sensor Input RF Power Measured Capacitance Change Measured Reflection Loss MEMS Beam Capacitance Change Microsensor Microsensors And Nanosensors Microwave IC Microwave Performance MMIC Semiconductor Integrated Circuit Waveguide And Microwave Transmission Line
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Ka-band RF MEMS capacitive switch with low loss, high isolation, long-term reliability and high power handling based on GaAs MMIC technology

High-power up to 4 W characteristics of the capacitive microwave power sensor with grounded beam

A Novel Thermoelectric and Capacitive Power Sensor With Improved Dynamic Range Based on GaAs MMIC Technology

An Inline RF Power Sensor Based on Fixed Capacitive Coupling for GaAs MMIC Applications

Optimization of Thermoelectric Microwave Power Sensors Based on Thin-Membrane Structure

Research on a Ka-Band MEMS Power Sensor Investigated with an MEMS Cantilever Beam

One to 40 GHz ultra-wideband RF MEMS direct-contact switch based on GaAs MMIC technique

New compact Ka-band CPW rat-race coupler using GaAs MMIC technology

A Frequency-Compensation-Type Microwave Power Sensor Fabricated by GaAs MMIC Process

Inline capacitive RF power sensor based on floating MEMS beam for GaAs MMIC applications

Similar Documents

Ka-band RF MEMS capacitive switch with low loss, high isolation, long-term reliability and high power handling based on GaAs MMIC technology

High-power up to 4 W characteristics of the capacitive microwave power sensor with grounded beam

A Novel Thermoelectric and Capacitive Power Sensor With Improved Dynamic Range Based on GaAs MMIC Technology

An Inline RF Power Sensor Based on Fixed Capacitive Coupling for GaAs MMIC Applications

Optimization of Thermoelectric Microwave Power Sensors Based on Thin-Membrane Structure

Research on a Ka-Band MEMS Power Sensor Investigated with an MEMS Cantilever Beam

One to 40 GHz ultra-wideband RF MEMS direct-contact switch based on GaAs MMIC technique

New compact Ka-band CPW rat-race coupler using GaAs MMIC technology

A Frequency-Compensation-Type Microwave Power Sensor Fabricated by GaAs MMIC Process

Inline capacitive RF power sensor based on floating MEMS beam for GaAs MMIC applications