NDLI: Structural Parameter Dependence of Light Extraction Efficiency in Photonic Crystal InGaN Vertical Light-Emitting Diode Structures

Content Provider	IEEE Xplore Digital Library
Author	Han-Youl Ryu Jong-In Shim
Copyright Year	1965
Abstract	Light extraction efficiency (LEE) in thin-film InGaN vertical light-emitting diode (LED) structures with photonic crystal patterns is studied using the three-dimensional finite-difference time-domain simulation. We systematically investigate the dependence of LEE on various structural parameters of photonic crystal vertical LEDs such as the thickness of the p-GaN and n-GaN layers, and air-hole depth and size. It is found that high LEE of > 80% is obtainable from unencapsulated photonic crystal LEDs for a wide range of structural parameters. In particular, higher LEE is observed for the structures with relatively long-period photonic crystal patterns and possible mechanisms for the large enhancement of LEE are discussed.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	714
Ending Page	720
Page Count	7
File Size	525304
File Format	PDF
ISSN	00189197
Volume Number	46
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Structural engineering Photonic crystals Light emitting diodes Substrates Transistors Finite difference methods Time domain analysis Thermal conductivity Rough surfaces Surface roughness finite-difference time-domain (FDTD) method Light-emitting Diode InGaN materials photonic crystal light extraction efficiency
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Improving the Vertical Light Extraction Efficiency of GaN-Based Thin-Film Flip-Chip LED With Double Embedded Photonic Crystals

Design Optimization of Photonic Crystal Structure for Improved Light Extraction of GaN LED

Analysis on the Light Extraction Efficiency of GaN-Based Nanowires Light-Emitting Diodes

High Efficiency GaN Light-Emitting Diodes With Two Dimensional Photonic Crystal Structures of Deep-Hole Square Lattices

Enhanced Vertical Extraction Efficiency From a Thin-Film InGaN–GaN Light-Emitting Diode Using a 2-D Photonic Crystal and an Omnidirectional Reflector

Enhanced light-extraction efficiency of GaN-based light-emitting diodes with hybrid Photonic Crystals

An extremely low-index photonic crystal layer for enhanced light extraction from organic light-emitting diodes

Integration of Photonic Crystals on GaN-Based Blue LEDs Using Silicon Mold Substrates

Numerical simulations of light-extraction efficiencies of light-emitting diodes on micro and nanopatterned sapphire substrates

Structural Parameter Dependence of Light Extraction Efficiency in Photonic Crystal InGaN Vertical Light-Emitting Diode Structures

Similar Documents

Improving the Vertical Light Extraction Efficiency of GaN-Based Thin-Film Flip-Chip LED With Double Embedded Photonic Crystals

Design Optimization of Photonic Crystal Structure for Improved Light Extraction of GaN LED

Analysis on the Light Extraction Efficiency of GaN-Based Nanowires Light-Emitting Diodes

High Efficiency GaN Light-Emitting Diodes With Two Dimensional Photonic Crystal Structures of Deep-Hole Square Lattices

Enhanced Vertical Extraction Efficiency From a Thin-Film InGaN–GaN Light-Emitting Diode Using a 2-D Photonic Crystal and an Omnidirectional Reflector

Enhanced light-extraction efficiency of GaN-based light-emitting diodes with hybrid Photonic Crystals

An extremely low-index photonic crystal layer for enhanced light extraction from organic light-emitting diodes

Integration of Photonic Crystals on GaN-Based Blue LEDs Using Silicon Mold Substrates

Numerical simulations of light-extraction efficiencies of light-emitting diodes on micro and nanopatterned sapphire substrates

Structural Parameter Dependence of Light Extraction Efficiency in Photonic Crystal InGaN Vertical Light-Emitting Diode Structures