NDLI: Suppression of ambipolar leakage current in Schottky barrier MOSFET using gate engineering

Content Provider	IET Digital Library
Author	Kale, S. Kondekar, P. N.
Abstract	A novel asymmetric isolated gates dopant segregated Schottky barrier MOSFET (AIG DS-SBMOS) for the suppression of ambipolar leakage current (I AMB) using gate engineering is reported. The AIG DS-SBMOS consists of a dopant segregated source/drain with two asymmetric isolated gates (control gate, fixed gate) having different metal work functions. The control gate is used to control current conduction by modifying the Schottky barrier height and width at the source/channel junction; while, the fixed gate modulates the drain side Schottky barrier to the suppress I AMB caused by hole injection in the off-state condition. In contrast to the conventional SBMOS and DS-SBMOS that suffer from ambipolarity, the proposed device is free from severe I AMB. Moreover, the proposed AIG DS-SBMOS has a high I ON/I OFF ratio of 107 with nearly the same I ON and subthreshold swing as that of the DS-SBMOS. The proposed device structure is especially beneficial for nanowire-based transistors.
Starting Page	1536
Ending Page	1538
Page Count	3
ISSN	00135194
Volume Number	51
e-ISSN	1350911X
Issue Number	Issue 19, Sep (2015)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/51/19
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2015.0283
Journal	Electronics Letters
Publisher Date	2015-09-02
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	AIG DS-SBMOS Ambipolar Leakage Current Suppression Asymmetric Isolated Gate Dopant Segregated Schottky Barrier MOSFET Channel Junction Control Gate Current Conduction Control Dopant Segregated Drain Dopant Segregated Source Fixed Gate Modulation Gate Engineering Hole Injection Insulated Gate Field Effect Transistors Leakage Current Metal Work Function Metal–oxide–semiconductor Field-effect Transistor MOSFET Nanowire-based Transistor Nanowires Off-state Condition Schottky Barriers Semiconductor Junction Source Junction
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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