NDLI: Lattice parameter engineering for III–V long wave infrared photonics

Content Provider	IET Digital Library
Author	Belenky, G. Lin, Y. Shterengas, L. Donetsky, D. Kipshidze, G. Suchalkin, S.
Abstract	The design and fabrication of metamorphic periodic heterostructures containing InAsSb layers with controllable modulated Sb composition and well-regulated band alignments are reported. The bandgap energy of ordered alloy can be much smaller than that in bulk InAsSb with any Sb content. The modulation period is determined by the thicknesses of the strain compensated InAsSb x /InAsSb y pairs grown on a virtual GaIn z Sb substrate with a given lattice constant. The experiment shows that the deviation of the modulation period from ∼2.3 to ∼5.5 nm leads to the shift of the maximum of 20 K photoluminescence from 12.9 to 19.6 µm. It is concluded that the growth of strain compensated InAsSb x /InAsSb y on virtual substrates allows developing narrow bandgap III–V materials with various bandgap energies.
Starting Page	1521
Ending Page	1522
Page Count	2
ISSN	00135194
Volume Number	51
e-ISSN	1350911X
Issue Number	Issue 19, Sep (2015)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/51/19
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2015.2572
Journal	Electronics Letters
Publisher Date	2015-09-07
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Arsenic Compound Bandgap Energy Controllable Modulated Composition Crystal Structure of Specific Inorganic Compounds Electronic Structure of Crystalline Semiconductor Compound Energy Gap GaIn2Sb III-V Long Wave Infrared Photonics III-V SemiConductor InAsSb-InAsSb Indium Compound Insulator Lattice Constant Lattice Constants Lattice Parameter Engineering Metamorphic Periodic HeteroStructure Optical Design Technique Optical Fabrication Optical Material Optical System Design Periodic Structure Photoluminescence Photoluminescence in II-VI And III-V SemiConductor Strain Compensation Surface Grinding Wavelength 12.9 Mum to 19.6 Mum Well-regulated Band Alignments
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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