NDLI: GaN-on-silicon high electron mobility transistors with blocking voltage of 3 kV

Content Provider	IET Digital Library
Author	Herbecq, N. Jeune, I. Roch Linge, A. Grimbert, B. Zegaoui, M. Medjdoub, F.
Abstract	A three-terminal breakdown voltage over 3 kV is reported on AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on silicon (Si) (111) substrate with a buffer thickness of 5.5 µm. The breakdown voltage of the 1.5 × 50 μm2 devices has been improved by more than 200% by applying a local substrate removal all around the drain of the transistors in order to suppress the parasitic substrate conduction phenomenon. This establishes a new record breakdown voltage for GaN-on-silicon lateral power devices while maintaining a low specific on-resistance of about 10 mΩ · cm2.
Starting Page	1532
Ending Page	1534
Page Count	3
ISSN	00135194
Volume Number	51
e-ISSN	1350911X
Issue Number	Issue 19, Sep (2015)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/51/19
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2015.1684
Journal	Electronics Letters
Publisher Date	2015-09-07
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	AlGaN-GaN AlGaN-GaN HEMT Aluminium Compound Blocking Voltage Electric Breakdown Field Effect Device Gallium Compound GaN-on-silicon GaN-Si High Electron Mobility Transistors III-V SemiConductor Lateral Power Device Local Substrate Removal Parasitic Substrate Conduction Si (111) Substrate Silicon Size 5.5 Mum Three-terminal Breakdown Voltage Voltage 3 KV Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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