NDLI: Suppression of ambipolar conduction and investigation of RF performance characteristics of gate-drain underlap SiGe Schottky barrier field effect transistor

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Suppression of ambipolar conduction and investigation of RF performance characteristics of gate-drain underlap SiGe Schottky barrier field effect transistor

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The Journal of Engineering

Suppression of ambipolar conduction and investigation of RF performance characteristics of gate-drain underlap SiGe Schottky barrier field effect transistor

Content Provider	IET Digital Library
Author	Kumar, Prashanth Bhowmick, Brinda
Abstract	In this work, a hetero structure gate-drain underlap (UL) Schottky barrier (SB) Field Effect Transistor (FET) is explored to achieve high device performance compared with high-k and low-k hetero structure SB FET (HSBFET). The effects of gate drain UL junction on the performances of UL-HSBFETs have been studied in terms of electrical characteristics including on-current (I on), subthreshold swing, I on/I off ratio, ambipolar conduction, and I off current. The low on-state current of silicon-based SB FETs can be enhanced by introducing the low bandgap silicon germanium material. Gate-drain UL and silicon germanium channel with low barrier height provides less tunnelling width which enhances the carrier injection at on-state compared with low-k and high-k HSBFET. Further, the proposed UL-HSBFET suppresses the ambipolar conduction due to holes. In contrast to conventional high-k and low-k HSBFET that suffers from severe ambipolar conduction, the UL-HSBFET device reduces the conduction at drain-channel junction with increasing the UL length to 5, 10, 15, and 20 nm. This provides better radio frequency performances with improved carrier capability of the proposed device. Therefore, UL-HSBFET device can be one of the best possible competitor for high-frequency application. The performance comparison of all the devices is carried out using Technology Computer-Aided Design (TCAD) simulator.
Starting Page	626
Ending Page	630
Page Count	5
Volume Number	13
e-ISSN	17500443
Issue Number	Issue 5, May (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/mnl/13/5
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/mnl.2017.0895
Journal	Micro & Nano Letters
Publisher Date	2018-05-01
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Ambipolar Conduction Ambipolar Conduction Suppression Bandgap Silicon Germanium Material Carrier Injection Dielectric Material And Property Drain-channel Junction Electrical Characteristic Field Effect Device Gate-drain UL Junction Gate-drain Underlap Silicon Germanium Schottky Barrier Field Effect Transistor Ge-Si Alloy Heterostructure Gate-drain UL SB FET High-k Dielectric Thin Film High-k Heterostructure SB FET Hole Injection Improved Carrier Capability Low-barrier Height Low-k Dielectric Thin Film Low-k HSBFET Metallisation And Interconnection Technology Negative Gate Bias On-current Radiofrequency Performance RF Performance Characteristic Schottky Barriers Schottky Gate Field Effect Transistors Si-Ge Silicon Germanium Channel Size 10 Nm Size 15 Nm Size 20 Nm Size 5 Nm Subthreshold Swing TCAD Simulator UL-HSBFET Device
Content Type	Text
Resource Type	Article

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