NDLI: Linear X-band GaN HEMT transformer-based Doherty power amplifier

Content Provider	IET Digital Library
Author	Lee, S. Y. Woo, J. Park, S. Kwon, Y.
Abstract	An X-band gallium-nitride high electron mobility transistor (GaN HEMT) transformer-based Doherty power amplifier (TBD PA) module with a phase lineariser has been developed. The TBD PA uses Cree's 6 W GaN HEMT bare die and realised in seven-layer PCB. The proposed lineariser is employed before the TBD PA to compensate the phase distortion during the Doherty operation. The implemented TBD PA with 9.56 GHz continuous wave test shows a 38.5% power-added efficiency at 39.6 dBm output power. Linearity characterisation is also performed using 40 MHz bandwidth, two carriers aggregated long-term evolution-advanced signal and shows −35.4 dBc carrier aggregation evolved-universal terrestrial radio access adjacent channel leakage power ratio which is 7 dB enhanced after phase compensation.
Starting Page	1342
Ending Page	1343
Page Count	2
ISSN	00135194
Volume Number	52
e-ISSN	1350911X
Issue Number	Issue 15, Jul (2016)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/52/15
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2015.4464
Journal	Electronics Letters
Publisher Date	2016-06-17
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Adjacent Channel Leakage Power Ratio Amplifiers Bandwidth 40 MHz Carrier Aggregation Evolved-universal Terrestrial Radio Access Cree HEMT Bare Die Efficiency 38.5 Percent Field Effect Device Frequency 9.56 GHz Gallium Compound GaN High Electron Mobility Transistor High Electron Mobility Transistors III-V SemiConductor Linear X-band Gallium Nitride HEMT Transformer-based Doherty Power Amplifier Linearity Characterisation Long-Term Evolution-advanced Signal Microwave Circuit And Device Microwave Power Amplifiers Phase Compensation Phase Distortion Phase Lineariser Power 6 W Power-added Efficiency Printed Circuit Printed Circuit Board Seven-layer PCB TBD PA Module Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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