NDLI: Al0 .3Ga0.7N PN diode with breakdown voltage >1600 V

Content Provider	IET Digital Library
Author	Allerman, A. A. Armstrong, A. M. Fischer, A. J. Dickerson, J. R. Crawford, M. H. King, M. P. Moseley, M. W. Wierer, J. J. Kaplar, R. J.
Abstract	Demonstration of Al0.3Ga0.7N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal-organic vapour-phase epitaxy on 1.3-mm-thick sapphire in order to achieve crack-free structures. A junction termination edge structure was employed to control the lateral electric fields. A current density of 3.5 kA/cm2 was achieved under DC forward bias and a reverse leakage current <3 nA was measured for voltages <1200 V. The differential on-resistance of 16 mΩ cm2 is limited by the lateral conductivity of the n-type contact layer required by the front-surface contact geometry of the device. An effective critical electric field of 5.9 MV/cm was determined from the epilayer properties and the reverse current–voltage characteristics. To our knowledge, this is the first aluminium gallium nitride (AlGaN)-based PN diode exhibiting a breakdown voltage in excess of 1 kV. It is noted that a Baliga figure of merit (V br 2/R spec,on) of 150 MW/cm2 found is the highest reported for an AlGaN PN diode and illustrates the potential of larger-bandgap AlGaN alloys for high-voltage devices.
Starting Page	1319
Ending Page	1321
Page Count	3
ISSN	00135194
Volume Number	52
e-ISSN	1350911X
Issue Number	Issue 15, Jul (2016)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/52/15
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2016.1280
Journal	Electronics Letters
Publisher Date	2016-06-24
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Al0.3Ga0.7N Aluminium Compound Aluminium Gallium Nitride-based PN Diode Baliga Figure of Merit Breakdown Voltage Crack-free Structures Critical Electric Field Current Density DC Forward Bias Differential On-resistance Electric Field Electrical Conductivity Epilayer Thickness Epitaxial Layer Front-surface Contact Geometry Gallium Compound High-voltage Device III-V SemiConductor Junction And Barrier Diode Junction Termination Edge Structure Lateral Conductivity Lateral Electric Field Control Leakage Current Metal-organic Vapour-phase Epitaxy MOCVD N-type Contact Layer P-n Junctions Reverse Current-voltage Characteristic Reverse Leakage Current Sapphire Semiconductor Device Breakdown Semiconductor Diode Semiconductor Junction Size 9.1 Mum Vapour Phase Epitaxial Growth Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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