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| Content Provider | IET Digital Library |
|---|---|
| Author | Koo, Hyungmo Kang, Hyunuk Lee, Wooseok Lee, Hwiseob Lee, Kang Yoon Hwang, Keum Cheol Yang, Youngoo |
| Abstract | A gallium-nitride high electron mobility transistor (GaN-HEMT) three-way asymmetric Doherty power amplifier using an unequal three-way Gysel power divider (GPD) is presented in this study. Considering the output power capacity of transistors, the peaking amplifier was designed to have an output power capacity that is 1.5 times larger than that of the carrier amplifier through the use of a parallel combination of two different power amplifiers. A peaking amplifier that is 1.5 times larger can provide a back-off level of 7.5 dB for another peak efficiency. Two different power amplifiers in the peaking amplifier can work as a single power amplifier through an optimization of the input power division ratio (PDR). To split the input power for the carrier and the two peaking amplifiers, an unequal three-way GPD with an optimized PDR was employed. The implemented Doherty power amplifier for the 2.14 GHz band exhibited a drain efficiency (DE) of 59.5% and an adjacent channel leakage ratio (ACLR) of 27.1 dBc at an average output power of 37.2 dBm (7.2 dB for the output power back-off) for the 2.14 GHz downlink long-term evolution signal, which has a peak-to-average power ratio of 6.5 dB and a signal bandwidth of 10 MHz. |
| Starting Page | 2115 |
| Ending Page | 2121 |
| Page Count | 7 |
| ISSN | 17518725 |
| Volume Number | 12 |
| e-ISSN | 17518733 |
| Issue Number | Issue 13, Oct (2018) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/iet-map/12/13 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/iet-map.2018.5464 |
| Journal | IET Microwaves, Antennas & Propagation |
| Publisher Date | 2018-07-20 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Amplifiers Back-off Level Bandwidth 10 MHz Downlink Long-term Evolution Signal Field Effect Device Frequency 2.14 GHz Gallium-nitride-HEMT Asymmetric Three-way Doherty Power Amplifier High Electron Mobility Transistor High Electron Mobility Transistors II-VI And III-V SemiConductor III-V SemiConductor Input Power Division Ratio Microwave Circuit And Device Optimisation Optimisation Technique Output Power Capacity Peak Efficiency Peak-to-average Power Ratio Peaking Amplifier Power Divider Signal Bandwidth UHF Power Amplifiers Unequal Three-way GPD Unequal Three-way Gysel Power Divider Waveguide And Microwave Transmission Line Component |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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