NDLI: Distributed power amplifier with novel integration technique of broadband impedance transformer using pseudomorphic HEMT and gallium nitride HEMT

Content Provider	IET Digital Library
Author	Narendra, Kumar Yan, Huan Hui Yarman, Binboga Siddik Latef, Tarik Abdul
Abstract	An advance approach of distributed power amplifier (DPA) design has been introduced in this study, based on broadband impedance transformer integration. By identifying the DPA's optimum impedance over the frequency range with load pull measurement technique, the impedance transformer with mixed-lumped elements using real-frequency technique is designed. The prototype of the transformer network is integrated with the three-stage DPA with pseudomorphic High-Electron-Mobility Transistor (HEMT) and gallium nitride HEMT technologies. Experimental output power performance achieves 40 dBm over bandwidth operation from 0.1 to 2.4 GHz, and the power added efficiency reaches 30% in average with gain of 30 dB. This proposed technique is essential to maximise DC–radio frequency conversion to the load termination and the transformer is having advantages over size area, implementation in small form factor and low-cost approach particularly compatible for radio communications applications.
Starting Page	949
Ending Page	954
Page Count	6
ISSN	17518725
Volume Number	11
e-ISSN	17518733
Issue Number	Issue 7, Jun (2017)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-map/11/7
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-map.2016.0934
Journal	IET Microwaves, Antennas & Propagation
Publisher Date	2017-02-08
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Active Filter Active Network Amplifiers Bandwidth 0.1 GHz to 2.4 GHz Broadband Impedance Transformer Integration Technique DC-RF Conversion Distributed Power Amplifier Design Efficiency 30 Percent Field Effect Device Gain 30 DB Gallium Compound GaN HEMT High Electron Mobility Transistors III-V SemiConductor Impedance Converter Load Pull Measurement Technique Load Termination Mixed-lumped Element Pseudomorphic HEMT Radio Communication Application Real-frequency Technique Solid State Microwave Circuit And Device Three-stage DPA Design UHF Field Effect Transistors UHF Power Amplifiers Wide Band Gap SemiConductor Wideband Amplifiers
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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