NDLI: Ultra fine line print process development for silicon solar cell metalisation

Content Provider	IEEE Xplore Digital Library
Author	Falcon, T. Clasper, S.
Copyright Year	2011
Description	Author affiliation: DEK Solar, 11 Albany Road, Weymouth, DT4 9TH, UK (Falcon, T.; Clasper, S.)
Abstract	One of the principal drivers for the continuing miniaturisation of frontside conductors on silicon solar cells is the trend toward higher emitter sheet resistances. This trend is apparent both in mainstream cell production, and with the introduction of selective emitter technologies. High Rsheet emitters make more efficient use of the blue end of the light spectrum, thereby enhancing cell efficiency. However, this benefit comes with the downside that the higher Rsheet emitter impedes the flow of electrons through the semi conducting silicon, and therefore reduces current collection. Using a greater number of finer conductors with reduced conductor spacing can mitigate these resistance losses with no additional shadowing loss, thereby acting as an enabler for high Rsheet emitter technologies. With today's mainstream cell manufacturers printing lines below 100µm wide, the sub 50µm printed line becomes the next logical milestone in the miniaturisation of frontside conductor geometries. This paper will describe the path to that milestone and beyond.
Starting Page	1
Ending Page	5
File Size	1556927
Page Count	5
File Format	PDF
ISBN	9781467306942
e-ISBN	9780956808608
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-09-12
Publisher Place	United Kingdom
Access Restriction	Subscribed
Rights Holder	IMAPS
Subject Keyword	Printing Silver Metalisation Photovoltaic cells Wires Apertures Conductors Silicon Ultra Fine Line Screen Printing
Content Type	Text
Resource Type	Article

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