NDLI: Characterization and comparison of 1.2 kV SiC power semiconductor devices

Content Provider	IEEE Xplore Digital Library
Author	DiMarino, C. Zheng Chen Boroyevich, D. Burgos, R. Mattavelli, P.
Copyright Year	2013
Description	Author affiliation: Bradley Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA (DiMarino, C.; Zheng Chen; Boroyevich, D.; Burgos, R.; Mattavelli, P.)
Abstract	This paper seeks to provide insight into state-of-the-art 1.2 kV Silicon Carbide (SiC) power semiconductor devices, including the MOSFET, BJT, SJT, and normally-on and normally-off JFET. Both commercial and sample devices from the semiconductor industry's well-known manufacturers; namely Cree, GE, ROHM, Fairchild, GeneSiC, Infineon, and SemiSouth, are evaluated in this study. To carry out this work, static characterization of each device is performed under increasing temperatures (25-200 °C). Dynamic characterization is also conducted through double-pulse tests. Accordingly, the paper describes the experimental setup used and the different measurements conducted, which comprise: threshold voltage, current gain, specific on-resistance, and the turn on and turn off switching energies. For the latter, the driving method used for each device is described in detail. Furthermore, for the devices that require on-state dc currents, driver losses are also taken into consideration. Key trends and observations are reported in an unbiased manner throughout the paper and summarized in the conclusion.
Starting Page	1
Ending Page	10
File Size	507405
Page Count	10
File Format	PDF
ISBN	9781479901166
DOI	10.1109/EPE.2013.6634364
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-09-02
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature measurement MOSFET Voltage measurement Silicon carbide Device characterization Power semiconductor device Current measurement JFET Threshold voltage JFETs Silicon Carbide (SiC) Bipolar Junction Transistor (BJT)
Content Type	Text
Resource Type	Article

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