NDLI: On-line [TJ, Vce] monitoring of IGBTs stressed by fast power cycling tests

Content Provider	IEEE Xplore Digital Library
Author	Rashed, A. Forest, F. Huselstein, J.-J. Martire, T. Enrici, P.
Copyright Year	2013
Description	Author affiliation: Inst. d'Electron. du Sud, Univ. Montpellier 2, Montpellier, France (Rashed, A.; Forest, F.; Huselstein, J.-J.; Martire, T.; Enrici, P.)
Abstract	This paper describes a part of a larger supervision system able to monitor the on-state voltage $V_{CE}$ and the junction temperature $T_{J}$ of IGBT in operation. That system is associated to an ageing test bench stressing IGBT modules by power cycling. All along the ageing test, it is necessary to supervise $V_{CE},$ always measured in the same conditions of junction temperature and collector current, in order to detect possible degradations of wire bonds and/or emitter metallization. In addition, the thermal swing amplitude of the power cycling must be adjusted to realize a given ageing protocol. That requires measuring the junction temperature evolution on a power cycle to choose the initial electrical conditions providing the wished temperature swing and then, to regularly verify the stability of this thermal stress during the ageing test. The temperature measurement needed for both monitoring is carried out by means of $V_{CE}$ measurement at low current level (100mA), that intrinsic on-stage voltage being a well-known thermo sensitive parameter. The first section describes briefly the ageing test bench, that places the power IGBT modules in operating conditions close to those of real world (PWM operations), and presents the thermal stress protocol applied to the devices, the aim being to define the context in which the measurements have to be made. The second section presents, on the one hand, the principle of an automated measurement of $V_{CE}(100A-125°C),$ made in steady-state, to detect a possible degradation of the top part of IGBT dies, on the other hand, the dynamic measurement of the junction temperature in operation, i.e. in power cycling conditions generated by the PWM modulation. In both cases, experimental results are shown that demonstrate the feasibility and the good accuracy of these monitoring methods.
Starting Page	1
Ending Page	9
File Size	3105348
Page Count	9
File Format	PDF
ISBN	9781479901166
DOI	10.1109/EPE.2013.6631965
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-09-02
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature measurement Insulated gate bipolar transistors Power measurement Current measurement Aging Pulse width modulation Junctions
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Advanced power cycling test for power module with on-line on-state VCE measurement

Evaluation of selected diagnostic variables for the purpose of assessing the ageing effects in high-power IGBTs

Monitoring IGBT's health condition via junction temperature variations

Experimental investigation on switching characteristics of IGBTs for traction application

Vce-based chip temperature estimation methods for high power IGBT modules during power cycling — A comparison

Power cycling test bench for IGBT power modules used in wind applications

Test setup for accelerated test of high power IGBT modules with online monitoring of Vce and Vf voltage during converter operation

A Simple Approach for Dynamic Junction Temperature Estimation of IGBTs on PWM Operating Conditions

Evaluation of $V_{rm ce}$ Monitoring as a Real-Time Method to Estimate Aging of Bond Wire-IGBT Modules Stressed by Power Cycling

On-line [TJ, Vce] monitoring of IGBTs stressed by fast power cycling tests

Similar Documents

Advanced power cycling test for power module with on-line on-state VCE measurement

Evaluation of selected diagnostic variables for the purpose of assessing the ageing effects in high-power IGBTs

Monitoring IGBT's health condition via junction temperature variations

Experimental investigation on switching characteristics of IGBTs for traction application

Vce-based chip temperature estimation methods for high power IGBT modules during power cycling — A comparison

Power cycling test bench for IGBT power modules used in wind applications

Test setup for accelerated test of high power IGBT modules with online monitoring of Vce and Vf voltage during converter operation

A Simple Approach for Dynamic Junction Temperature Estimation of IGBTs on PWM Operating Conditions

Evaluation of $V_{rm ce}$ Monitoring as a Real-Time Method to Estimate Aging of Bond Wire-IGBT Modules Stressed by Power Cycling

On-line [TJ, Vce] monitoring of IGBTs stressed by fast power cycling tests