NDLI: Short circuit behavior of the Bi-mode Insulated Gate Transistor (BIGT)

Content Provider	IEEE Xplore Digital Library
Author	Mari, J. Corvasce, C. Rahimo, M. Kopta, A. Storasta, L.
Copyright Year	2013
Description	Author affiliation: ABB Semicond., Lenzburg, Switzerland (Corvasce, C.; Rahimo, M.; Kopta, A.; Storasta, L.) \|\| GE Global Res., Garching, Germany (Mari, J.)
Abstract	The BIGT is a Reverse Conducting IGBT device which combines functionality of a high power IGBT and fast diode on a single chip. In this paper, an investigation of the IGBT mode short circuit performance of the BIGT is carried out. The behavior of the BIGT under IGBT mode short circuit conditions is illustrated by measurements on a 3.3kV 1500A HiPak1 module and then supported by circuit and detailed device physics simulations. The short circuit conditions of type II and type III are discussed, with the variations introduced due to the gate control of the BIGT when operated in reverse conducting mode. Comparison to standard IGBTs with Soft-Punch-Through (SPT) technology in a HiPak2 module is also provided.
Starting Page	1
Ending Page	9
File Size	847651
Page Count	9
File Format	PDF
ISBN	9781479901166
DOI	10.1109/EPE.2013.6631996
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-09-02
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulated gate bipolar transistors Fault tolerance IGBT Semiconductor device Device characterization New switching devices Switches Logic gates Light emitting diodes Semiconductor diodes Circuit faults Standards
Content Type	Text
Resource Type	Article

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Measurement of IGBT switching characteristics and loss using coaxial current transformer

A comparison of charge dynamics in the reverse-conducting RC IGBT and Bi-mode Insulated Gate Transistor BiGT

The model of IGBT as a power switch

Switching and conducting performance of SiC-JFET and ESBT against MOSFET and IGBT

A short circuit protection method based on a gate charge characteristic

Minimization effect of reverse recovery using IGBT

Realization of higher output power capability with the Bi-mode Insulated Gate Transistor (BIGT)

Study on gate characteristics and drive circuit for 300A/1200V insulated gate bipolar transistors

BIGT control optimisation for overall loss reduction

Short circuit behavior of the Bi-mode Insulated Gate Transistor (BIGT)

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