NDLI: Processing and characterization of a 100% low-temperature Ag-sintered three-dimensional structure

Content Provider	IEEE Xplore Digital Library
Author	Masson, A. Azzopardi, S. Le Henaff, F. Deletage, J.-Y. Woirgard, E. Bontemps, S. Joguet, J.
Copyright Year	2013
Description	Author affiliation: IMS Lab., Univ. of Bordeaux, Talence, France (Masson, A.; Azzopardi, S.; Le Henaff, F.; Deletage, J.-Y.; Woirgard, E.) \|\| Alent - Alpha, South Plainfield, NJ, USA (Joguet, J.) \|\| Microsemi Power Module Products, Bruges, France (Bontemps, S.)
Abstract	Due to RoHS restrictions, researches on lead-free packaging have increased over the past decade. Low Temperature Joining Techniques (such as silver sintering or Ni-Au Transient Liquid Phase Bonding) are particularly studied because they are processed below 300°C and the attaches obtained are reliable at high temperature. Silver paste sintering technique for die backside attach is now a well-known technology used in both industry and academic research. The objective of this work is to adapt the procedure related to conventional silver paste sintered assembly to produce a three-dimensional module. For such purpose, this paper presents some theoretical considerations on silver sintering in order to briefly introduce the technique. Then, sintering procedures for realizing both die backside attach and three-dimensional structure will be described. Experimental results (electrical and mechanical tests, cross-sections, thermal measurements) will be given and performances of the double-side structure will be compared to die backside attaches and with lead-free solder. This work demonstrates for the first time the feasibility of a 100% silver sintered three-dimensional module using silicon diodes and Ni-Au substrate. Mechanical properties of the two attach-packages are better than classical solders and the performances of each attach are similar to silver sintered die backside attach. These promising results open the way to the use of silicon devices for high power density assemblies because the dice will be cooled down on both sides. This technology just requires silver metallization on the two sides of the device and can be extended to new materials such SiC or GaN for high temperature applications.
Starting Page	1
Ending Page	9
File Size	904021
Page Count	9
File Format	PDF
ISBN	9781479901166
DOI	10.1109/EPE.2013.6631925
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-09-02
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silver Automotive applications Multichip modules Device Packaging Joints Bonding Assembly Substrates Periodic structures
Content Type	Text
Resource Type	Article

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